首页 >IRS21814PBF>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IRS21814PBF | HIGH AND LOW SIDE DRIVER Description TheIRS2181/IRS21814arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithindependenthigh-sideandlow-sidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.Thelogicinputiscompatiblewithstan | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | |
IRS21814PBF | 包装：散装 封装/外壳：14-DIP（0.300"，7.62mm） 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 14DIP | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | |
HIGH-ANDLOW-SIDEDRIVER | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
Floatingchanneldesignedforbootstrapoperation | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HIGH-ANDLOW-SIDEDRIVER | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HIGH-SIDEANDLOW-SIDEGATEDRIVERINSO14 | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
HIGH-SIDEANDLOW-SIDEGATEDRIVER | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
HIGH-SIDEANDLOW-SIDEGATEDRIVERINSO-14 Features -FloatingHigh-SideDriverinBootstrapOperationto600V -DrivesTwoN-ChannelMOSFETsorIGBTsinaHalfBridgeConfiguration -1.9ASource/2.3ASinkOutputCurrentCapability -OutputsToleranttoNegativeTransients -WideLow-SideGateDriverandLogicSupply:10Vto20V - | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
HIGHANDLOWSIDEDRIVER | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HIGHANDLOWSIDEDRIVER Description TheIR2181(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOSor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HIGHANDLOWSIDEDRIVER Description TheIR2181(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOS | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HIGHANDLOWSIDEDRIVER Description TheIR2213(S)isahighvoltage,highspeedpowerMOSFETandIGBTdriverwithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.LogicinputsarecompatiblewithstandardCMOSorLSTT | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HIGHANDLOWSIDEDRIVER Description TheIR2213(S)isahighvoltage,highspeedpowerMOSFETandIGBTdriverwithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.LogicinputsarecompatiblewithstandardCMOSorLSTT | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HIGHANDLOWSIDEDRIVER Description TheIR2181(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOS | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HIGHANDLOWSIDEDRIVER Description TheIR2181(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOS | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HIGHANDLOWSIDEDRIVER | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HIGHANDLOWSIDEDRIVER Description TheIR2181(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOSor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HIGHANDLOWSIDEDRIVER Description TheIR2213(S)isahighvoltage,highspeedpowerMOSFETandIGBTdriverwithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.LogicinputsarecompatiblewithstandardCMOSorLSTT | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HIGHANDLOWSIDEDRIVER Description TheIR2181(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOS | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HIGHANDLOWSIDEDRIVER Description TheIR2213(S)isahighvoltage,highspeedpowerMOSFETandIGBTdriverwithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.LogicinputsarecompatiblewithstandardCMOSorLSTT | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
产品属性
- 产品编号：
IRS21814PBF
- 制造商：
Infineon Technologies
- 类别：
集成电路（IC） > 栅极驱动器
- 包装：
散装
- 驱动配置：
半桥
- 通道类型：
独立式
- 栅极类型：
IGBT，N 沟道 MOSFET
- 电压 - 供电：
10V ~ 20V
- 逻辑电压 - VIL，VIH：
0.8V，2.5V
- 电流 - 峰值输出（灌入，拉出）：
1.9A，2.3A
- 输入类型：
非反相
- 上升/下降时间（典型值）：
40ns，20ns
- 工作温度：
-40°C ~ 150°C（TJ）
- 安装类型：
通孔
- 封装/外壳：
14-DIP（0.300"，7.62mm）
- 供应商器件封装：
14-DIP
- 描述：
IC GATE DRVR HALF-BRIDGE 14DIP
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon Technologies |
24+ |
14-DIP(0.300,7.62mm) |
27935 |
英飞凌电源管理芯片-原装正品 |
询价 | ||
INFINEON/英飞凌 |
24+ |
N/A |
5000 |
只做正品原装现货 |
询价 | ||
Infineon(英飞凌) |
23+ |
PDIP-14 |
1964 |
深耕行业12年,可提供技术支持。 |
询价 | ||
InternationalRectifier |
2022 |
ICDVRHI/LOSIDE14-DIP |
5058 |
原厂原装正品,价格超越代理 |
询价 | ||
IR |
2018+ |
DIP |
11256 |
只做进口原装正品!假一赔十! |
询价 | ||
ir |
dc13 |
原厂封装 |
125 |
INSTOCK:25/tube/dip14 |
询价 | ||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
InternationalRectifier |
23+ |
14-DIP |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IOR |
22+23+ |
DIP14 |
33781 |
绝对原装正品全新进口深圳现货 |
询价 | ||
IR |
23+ |
DIP |
154 |
原装环保房间现货假一赔十 |
询价 |
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