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IRL3803PBF中文资料PDF规格书
IRL3803PBF规格书详情
Description
Fifth Generation HEXFETs utilize advanced processing
techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercialindustrial
applications at power dissipation levels to approximately
50 watts. The low thermal resistance and low package cost of the
TO-220 contribute to its wide acceptance throughout the industry.
Logic - Level Gate Drive
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
产品属性
- 型号:
IRL3803PBF
- 功能描述:
MOSFET MOSFT 30V 120A 6mOhm 93.3nC LogLvAB
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Infineon Technologies |
23+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
询价 | ||
IR |
21+ |
TO220 |
35200 |
一级代理/放心采购 |
询价 | ||
23+ |
N/A |
59810 |
正品授权货源可靠 |
询价 | |||
INFINEON |
2022+ |
TO-220 |
57550 |
询价 | |||
Infineon/英飞凌 |
2023+ |
TO-220AB |
6000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
IR |
22+ |
TO-220 |
9000 |
原装正品 |
询价 | ||
Infineon/英飞凌 |
21+ |
TO-220AB |
10000 |
原装,品质保证,请来电咨询 |
询价 | ||
TE/泰科 |
2308+ |
288700 |
一级代理,原装正品,公司现货! |
询价 | |||
IR |
22+ |
TO-220 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
IR |
23+ |
TO-220 |
9896 |
询价 |