首页 >IRFSL3207PBF>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
LowPower,3Vto5.5V,250kbps,RS-232Transmitters/Receivers | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
LowPower,3Vto5.5V,250kbps,RS-232Transmitters/Receivers TheIntersilICL32X7devicesare3.0Vto5.5VpoweredRS-232transmitters(five)/receivers(three)whichmeetElA/TIA-232andV.28/V.24specifications,evenatVCC=3.0V.TargetedapplicationsareISDNTerminalAdaptors,PDAs,Palmtops,peripherals,andnotebookandlaptopcomputerswherethelow | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
LowPower,3Vto5.5V,250kbps,RS-232Transmitters/Receivers TheIntersilICL32X7devicesare3.0Vto5.5VpoweredRS-232transmitters(five)/receivers(three)whichmeetElA/TIA-232andV.28/V.24specifications,evenatVCC=3.0V.TargetedapplicationsareISDNTerminalAdaptors,PDAs,Palmtops,peripherals,andnotebookandlaptopcomputerswherethelow | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
LowPower,3Vto5.5V,250kbps,RS-232Transmitters/Receivers | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
LowPower,3Vto5.5V,250kbps,RS-232Transmitters/Receivers | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor •DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤4.1mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperati | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor •DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤4.1mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperati | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HighEfficiencySynchronousRectificationinSMPS | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HEXFETPowerMOSFET Applications HighEfficiencySynchronousRectificationinSMPS UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits WorldwideBestRDS(on)inTO-220 ImprovedGate,AvalancheandDynamicdV/dtRuggedness FullyCharacterizedCapacitancea | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET짰PowerMOSFET Applications HighEfficiencySynchronousRectificationinSMPS UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits ImprovedGate,AvalancheandDynamicdV/dtRuggedness FullyCharacterizedCapacitanceandAvalancheSOA | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HighEfficiencySynchronousRectificationinSMPS | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
N-ChannelMOSFETTransistor •DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤4.1mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperati | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor •DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤4.1mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperati | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HEXFETPowerMOSFET Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching ●HardSwitchedandHighFrequencyCircuits Benefits ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●En | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET Applications HighEfficiencySynchronousRectificationinSMPS UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits ImprovedGate,AvalancheandDynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheSOA | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HEXFETPowerMOSFET Applications HighEfficiencySynchronousRectificationinSMPS UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits WorldwideBestRDS(on)inTO-220 ImprovedGate,AvalancheandDynamicdV/dtRuggedness FullyCharacterizedCapacitancea | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
详细参数
- 型号：
IRFSL3207PBF
- 制造商：
IRF
- 制造商全称：
International Rectifier
- 功能描述：
HEXFET㈢Power MOSFET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
英飞凌 |
21+ |
TO262 |
6000 |
绝对原裝现货 |
询价 | ||
isc |
2024 |
I2PAK/TO-262 |
5000 |
国产品牌isc,可替代原装 |
询价 | ||
INFINEON |
23+ |
TO262 |
14253 |
原包装原标现货,假一罚十, |
询价 | ||
Infineon |
23+ |
TO262 |
15500 |
英飞凌优势渠道全系列在售 |
询价 | ||
IR |
07+/08+ |
TO-262-3 |
185 |
询价 | |||
IR |
23+ |
TO-262 |
7600 |
全新原装现货 |
询价 | ||
IR |
2022 |
TO-262 |
5280 |
原厂原装正品,价格超越代理 |
询价 | ||
IR |
23+ |
TO-262-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
原装 |
22+23+ |
NA |
12351 |
绝对原装正品全新进口深圳现货 |
询价 |
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