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IRFU9024

PowerMOSFET(Vdss=-60V,Rds(on)=0.28ohm,Id=-8.8A)

Description ThirdGenerationHEXFETsMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR9024) •St

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFU9024

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半导体

IRFU9024

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU9024

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU9024

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU9024

PowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU9024

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR9024,SiHFR9024) •Straightlead(IRFU9024,SiHFU9024) •Availableintapeandreel •P-channel •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技威世科技半导体

IRFU9024

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFU9024

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFU9024N

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFU9024N

UltraLowOn-Resistance

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU9024N

PowerMOSFET(Vdss=-55V,Rds(on)=0.175ohm,Id=-11A)

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFU9024NCPBF

HEXFETPOWERMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFU9024NCPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU9024NCPBF

ULTRALOWON-RESISTANCE

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU9024NPBF

UltraLowOn-Resistance

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFU9024NPBF

ULTRALOWON-RESISTANCE

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU9024NPBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFU9024NPBF

ULTRALOWON-ORSISTANCE

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU9024NPBF

HEXFETPOWERMOSFET(VDSS=-55V,RDS(on)=0.175廓,ID=-11A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

详细参数

  • 型号:

    IRFR9024N

  • 功能描述:

    MOSFET MOSFET, P-CHANNEL, -55V, 11A, 175 mOhm, 12.7 nC Qg, D-Pak

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
16+
DIP
32500
原装进口现货,假一罚十
询价
IR
23+
TO-252
12300
全新原装真实库存含13点增值税票!
询价
IR
22+
TO-252
13000
绝对原装现货,价格低,欢迎询购!
询价
TT ELECTRONICS
23+
86863
全新原装,有询必回
询价
IR(国际整流器)
2023+
N/A
4550
全新原装正品
询价
TECH PUBLIC(台舟)
24+
TO-252
5000
诚信服务,绝对原装原盘。
询价
IR
258
原装正品长期供货,如假包赔包换 徐小姐13714450367
询价
IR
06+
TO-252
15000
原装库存
询价
IR
2022
TO-252
6800
原厂原装正品,价格超越代理
询价
IR
01+
TO252
74
询价
更多IRFR9024N供应商 更新时间2024-6-17 11:30:00