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B230AQ

2.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

DescriptionandApplications ThisSchottkyBarrierRectifierisdesignedtomeetthegeneralrequirementsofcommercialapplications.Itisideallysuitedforuseas: •PolarityProtectionDiode •Re-CirculatingDiode •SwitchingDiode •BlockingDiode •FreewheelDiode FeaturesandBenefit

DIODESDiodes Incorporated

达尔科技

B230B

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

B230B

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIER ReverseVoltage-20to200VoltsForwardCurrent-2.0Amperes FEATURES TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 Forsurfacemountedapplications Metalsiliconjunction,majoritycarrierco

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

深圳辰达半导体深圳辰达半导体有限公司

B230B

2A30VSchottkydiode

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者:深圳市福田区吉富昌电子商行

B230BE

2.0ASCHOTTKYBARRIERRECTIFIER

DescriptionandApplications TheSchottkyrectifierprovidinglowVFandexcellentreverseleakagestabilityathightemperatures,thisdeviceisidealforuseingeneralrectificationapplicationssuchas: •BoostDiode •BlockingDiode •RecirculatingDiode FeaturesandBenefits •Reduced

DIODESDiodes Incorporated

达尔科技

B230LA

HighCurrentDensitySurface-MountSchottkyRectifier

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Guardringforovervoltageprotection •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •Highsurgecapability •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C •Materialcategorization:fordefinit

VishayVishay Siliconix

威世科技威世科技半导体

B230LA

High-CurrentDensitySurfaceMountSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半导体

B230LA

High-CurrentDensitySurfaceMountSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半导体

B230LA

HighCurrentDensitySurfaceMountSchottkyRectifier

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Guardringforovervoltageprotection •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •Highsurgecapability •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C •Materialcategorization:Fordefiniti

VishayVishay Siliconix

威世科技威世科技半导体

B230LA

High-CurrentDensitySurfaceMountSchottkyRectifier

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Guardringforovervoltageprotection •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •Highsurgecapability •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C •ComplianttoRoHSDirective2002/95/E

VishayVishay Siliconix

威世科技威世科技半导体

B230LB

LOVFSURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

PACELEADERPACELEADER

霈峯霈峯實業有限公司

B230M

SurfaceMountSchottkyBarrierDiodes

Features: *PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0UtilizingFlame RetardantEpoxyMoldingCompound. *Forsurfacemountedapplications. *ExceedsenvironmentalstandardsofML-S-19500/228 *Lowleakagecurrent

WEITRONWEITRON

威堂電子科技

B230Q

2.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

DescriptionandApplications ThisSchottkyBarrierRectifierisdesignedtomeetthegeneralrequirementsofcommercialapplications.Itisideallysuitedforuseas: •PolarityProtectionDiode •Re-CirculatingDiode •SwitchingDiode •BlockingDiode •FreewheelDiode FeaturesandBenefit

DIODESDiodes Incorporated

达尔科技

BD230

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-126package •ComplementtotypeBD231 •Highcurrent(Max:1.5A) •Lowvoltage(Max:80V) APPLICATIONS •DrivestageinTVcircuits

SAVANTIC

Savantic, Inc.

BD230

iscSiliconNPNPowerTransistor

DESCRIPTION •DCCurrentGain- :hFE=40(Min)@IC=0.15A •ComplementtoTypeBD227/229/231 APPLICATIONS •Designedforuseindriverstagesintelevisioncircuits.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BD230

NPNpowertransistor

DESCRIPTION NPNpowertransistorinaTO-126;SOT32plasticpackage.PNPcomplements:BD227,BD229andBD231. FEATURES •Highcurrent(max.1.5A) •Lowvoltage(max.80V). APPLICATIONS •Driverstagesintelevisioncircuits.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BD230

SiliconNPNPowerTransistors

SAVANTIC

Savantic, Inc.

BD230

SiliconNPNPowerTransistor

DESCRIPTION •DCCurrentGain- :hFE=40(Min)@IC=0.15A •ComplementtoTypeBD227/229/231 APPLICATIONS •Designedforuseindriverstagesintelevisioncircuits.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

BPS230

2mmHumiditySensor

BournsBourns Inc.

伯恩斯(邦士)

BR230SUR

BRSurgeBreaker

Features&Benefits: •Completehomesurge protectionforallcircuitsplus afunctional2-polethermal magneticbreaker •Directconnectiontothe busbarprovidessuperior protectionandeasyinstallation fornewconstructionor renovation •MeetsbothUL489aswell asUL14493rdEdi

EATONEaton All Rights Reserved.

伊顿伊顿公司

详细参数

  • 型号:

    IRFR230B

  • 制造商:

    FAIRCHILD

  • 制造商全称:

    Fairchild Semiconductor

  • 功能描述:

    200V N-Channel MOSFET

供应商型号品牌批号封装库存备注价格
IR
05+
TO-252
1
询价
仙童
06+
TO-252
8000
原装
询价
FAIRCHILD
23+
TO-252
9526
询价
FSC
17+
TO-252
6200
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FAIRCHILD
1822+
TO-252
9852
只做原装正品假一赔十为客户做到零风险!!
询价
FAIRCHILD
18+
TO-252
41200
原装正品,现货特价
询价
IR
21+
TO-252
30000
只做正品原装现货
询价
FAIRCHILD/仙童
21+
TO-252
50000
终端可免费提供样品,欢迎咨询
询价
FAIRCHILD/仙童
23+
TO-252
50000
全新原装正品现货,支持订货
询价
更多IRFR230B供应商 更新时间2024-6-19 16:30:00