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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IRFR1N60ATRLPBF	文件：156.53 Kbytes Page：8 Pages	Power MOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFR1N60ATRLPBFA	文件：270.24 Kbytes Page：13 Pages	Power MOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
1N60	文件：71.1 Kbytes Page：1 Pages	GOLDBONDEDGERMANIUMDIODE GermaniumGlassDiode Features •GermaniumGlassDiode •RoHSCompliance	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
1N60	文件：197.55 Kbytes Page：4 Pages	SiliconAvalancheDiodes-1500WattMetalAxialLeadedTransientVoltageSuppressors FEATURES •Hermeticallysealed •Breakdownvoltagerange6.8-200volts •Glasspassivatedjunction •Excellentclampingcapability •Lowzenerimpedance •100surgetested •-55°Cto+150°C •Bi-directional MAXIMUMRATING •PeakPulsePower(Ppk):15000Watts(10x1000µs)@25°C(seedi	LittelfuseLittelfuse Inc. 力特富斯（Littelfuse）力特公司	Littelfuse
1N60	文件：80.99 Kbytes Page：2 Pages	SchottkyBarrierDiode Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching Construction Siliconepitaxialplanar	FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司	FORMOSA
1N60	文件：41.79 Kbytes Page：1 Pages	JEDECDO-7PACKAGE JEDECDO-7PACKAGE	ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商	ETC1
1N60	文件：143.99 Kbytes Page：8 Pages	1.2Amps,600VoltsN-CHANNELMOSFET DESCRIPTION TheUTC1N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpow	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC
1N60	文件：310.86 Kbytes Page：2 Pages	GERMANIUMDIODES Features ·Metalsiliconjunction,majoritycarrierconduction ·Highcurrentcapability,Lowforwardvoltagedrop ·ExtremelylowreversecurrentlR ·Ultraspeedswitchingcharacteristics ·Smalltemperaturecoefficientofforwardcharacteristics ·SatisfactoryWavedetectione	DAESAN Daesan Electronics Corp.	DAESAN
1N60	文件：51.09 Kbytes Page：2 Pages	SMALLSIGNALSCHOTTKYDIODE VOLTAGERANGE:40V CURRENT:0.03A FEATURES Metalsilliconjunctionmajoritycarrierconduction Highcurrentcapability,lowforwardvoltagedrop ExtremelylowreversecurrentIR Ultraspeedswitchingcharacteristics Smalltemperaturecoefficientofforwardcharacteristics	BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司	BILIN
1N60	文件：239.88 Kbytes Page：2 Pages	SchottkyBarrierDiodesSMALLSIGNALSCHOTTKYDIODES30m/50mAMPERES40/45VOLTS Features: HighReliability LowReverseCurrentandLowForwardVoltage Applications: *LowCurrentRectificationandHighSpeedSwitching	WEITRONWEITRON 威堂電子科技	WEITRON
1N60	文件：127.55 Kbytes Page：1 Pages	600VN-ChannelMOSFET Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •MoistureSensitivity:Level1perJ-STD-020C MaximumRatings •Storage&OperatingJunctionTemperature:-65℃to+125℃	TGS Tiger Electronic Co.,Ltd	TGS
1N60	文件：138.98 Kbytes Page：2 Pages	SchottkyBarrierRectifier Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •MoistureSensitivity:Level1perJ-STD-020C MaximumRatings •Storage&OperatingJunctionTemperature:-65℃to+125℃	TGS Tiger Electronic Co.,Ltd	TGS
1N60	文件：72.86 Kbytes Page：3 Pages	SMALLSIGNALSCHOTTKYDIODES FEATURES •Metal-on-siliconjunction,majoritycarrierconduction •Highcurrentcapability,Lowforwardvoltagedrop •ExtremelylowreversecurrentIR •Ultraspeedswitchingcharacteristics •Smalltemperaturecoefficientofforwardcharacteristics •Satisfactorywavedetectionefficiency	JINANJINGHENGJinan Jingheng (Group) Co.,Ltd 晶恒集团济南晶恒电子有限责任公司	JINANJINGHENG
1N60	文件：1.04021 Mbytes Page：2 Pages	SMALLSIGNALSCHOTTKYDIODES ReverseVoltage-40to45Volts ForwardCurrent-0.03/0.05Amperes FEATURES Fastswitchingforhighefficiency Lowreverseleakage Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed 250C/10seconds,0.375”(9.5mm)leadlength,5lbs.(2.3kg)tension	SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司	SY
1N60	文件：947.3 Kbytes Page：2 Pages	SMALLSIGNALSCHOTTKYDIODE FEATURES ●Metal-on-siliconjunction,majoritycarrierconduction ●Highcurrentcapability,Lowforwardvoltagedrop ●ExtremelylowreversecurrentIr ●Ultraspeedswitchingcharacteristics ●Smalltemperaturecoefficientofforwardcharacteristics ●SatisfactoryWavedetectio	DIOTECH Diotech Company.	DIOTECH
1N60	文件：275.21 Kbytes Page：6 Pages	1.2Amps,600/650VoltsN-CHANNELMOSFET	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC
1N60	文件：419.26 Kbytes Page：3 Pages	SchottkyBarrierRectifier Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignatesCompliant.Seeorderinginformation) •MoistureSensitivityLevel1 MaximumRatings •Storage&	MCCMicro Commercial Components 美微科美微科半导体公司	MCC
1N60	文件：75.67 Kbytes Page：1 Pages	Lowforwardvoltagedrop-lowpowerconsumption FEATURES Lowforwardvoltagedrop -lowpowerconsumption Thirtyyearsofprovenreliability -onemillionhoursmeantimebetweenfailures(MTBF) Verylownoiselevel Metallurgicallybonded	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
1N60	文件：365.394 Kbytes Page：2 Pages	45VDetectionswitchtube	SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 PDF上传者：深圳市福田区吉富昌电子商行	SUNMATE
1N60	文件：365.313 Kbytes Page：2 Pages	SMALLSIGNALSCHOTTKYDIODES	SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 PDF上传者：深圳市福田区吉富昌电子商行	SUNMATE

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详细参数

型号：
IRFR1N60ATRL
功能描述：
MOSFET N-Chan 600V 1.4 Amp
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	IRFR1N60ATRLPBF	Vishay Siliconix	24+	D-Pak	30000	晶体管-分立半导体产品-原装正品	询价
深圳市高捷芯城科技有限公司	IRFR1N60ATRLPBF	VISHAY(威世)	23+	TO-252	9908	支持大陆交货,美金交易。原装现货库存。	询价
中科航电(深圳)半导体技术有限公司	IRFR1N60ATRLPBF	VishaySiliconix	19+	TO-252-3	56800	DPak(2Leads+Tab)	询价
深圳市宏捷佳电子科技有限公司	IRFR1N60ATRLPBF	Vishay	23+	DPAK	33500	全新原装真实库存含13点增值税票!	询价
艾睿国际（香港）有限公司	IRFR1N60ATRLPBF	VISHAY(威世)	2112+	TO-252-3	115000	3000个/圆盘一级代理专营品牌!原装正品,优势现货,	询价
深圳市科雨电子有限公司	IRFR1N60ATRLPBF	VISHAY	1809+	TO-252	3675	就找我吧!--邀您体验愉快问购元件!	询价
深圳市恒意法电子有限公司	IRFR1N60ATRLPBF	Vishay Siliconix	21+	PowerPAK? SO-8	21000	专业分立半导体,原装渠道正品现货	询价
深圳市国宇半导体科技有限公司	IRFR1N60ATRLPBF	VISHAY/威世	23+	DPAK	10000	公司只做原装正品	询价
深圳市河锋鑫科技有限公司	IRFR1N60ATRLPBF	Vishay Siliconix	22+	TO2523 DPak (2 Leads + Tab) SC	9000	原厂渠道,现货配单	询价
深圳市芯福林电子科技有限公司	IRFR1N60ATRLPBF	Vishay Siliconix	21+	TO2523 DPak (2 Leads + Tab) SC	13880	公司只售原装,支持实单	询价

更多IRFR1N60ATRL供应商更新时间2024-6-10 10:11:00

详细参数

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