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IRFR120NPBF中文资料PDF规格书
IRFR120NPBF规格书详情
VDSS = 100V
RDS(on) = 0.21Ω
ID = 9.4A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount applications.
Surface Mount (IRFR120N)
Straight Lead (IRFU120N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead Free
产品属性
- 型号：
IRFR120NPBF
- 功能描述：
MOSFET 100V 1 N-CH HEXFET PWR MOSFET 210mOhms
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
专业军工 |
NA |
1000 |
只做原装正品 |
询价 | ||
N/A |
2020+ |
a |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
IRF |
DPAK-3PIN |
39 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | |||
IR |
24+ |
TO-252 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
IR |
22+ |
TO252 |
165 |
原装现货假一赔十 |
询价 | ||
IR |
24+ |
TO252 |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
INFINEON |
23+ |
NA |
15000 |
原装现货,实单价格可谈 |
询价 | ||
INTERNATIONA |
22+ |
SOT-2633&NBS |
4500 |
全新原装品牌专营 |
询价 | ||
IR |
2018+ |
TO252 |
25986 |
代理原装现货/特价热卖! |
询价 | ||
IR |
23+ |
D-PAK |
65400 |
询价 |
