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IRFR120中文资料PDF规格书

IRFR120
厂商型号

IRFR120

功能描述

Power MOSFET

文件大小

4.22483 Mbytes

页面数量

7

生产厂商 Kersemi Electronic Co., Ltd.
企业简称

KERSEMI

中文名称

Kersemi Electronic Co., Ltd.官网

原厂标识
数据手册

下载地址一下载地址二

更新时间

2024-6-9 22:59:00

IRFR120规格书详情

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Surface Mount (IRFR120/SiHFR120)

• Straight Lead (IRFU120/SiHFU120)

• Available in Tape and Reel

• Fast Switching

• Ease of Paralleling

• Lead (Pb)-free Available

产品属性

  • 型号:

    IRFR120

  • 功能描述:

    MOSFET N-Chan 100V 7.7 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商 型号 品牌 批号 封装 库存 备注 价格
IR
23+
NA/
6415
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IR
2016+
SOT-252
3500
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IR
2020+
TO-252
80000
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IR
23+
TO252
33500
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IR
22+
SOT252
100000
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询价
infineon
2020+
TO-252
16800
绝对原装进口现货,假一赔十,价格优势!?
询价
ISC(无锡固电)
23+
TO252
6000
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IR
24+
TO 252
160865
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IR
22+23+
TO252
23196
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IR
22+
TO-252
8000
原装正品支持实单
询价