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IRFR

Power MOSFET(Vdss=100V, Rds(on)=0.21ohm, Id=9.4A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFR

Ultra Low On-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR

Surface Mount (IRFR120N)

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR/U1010Z

Advanced Process Technology

Description SpecificallydesignedforAutomotiveapplications,thisMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetiti

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR/U220A

Advanced Power MOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10A(Max.)@VDS=200V ■LowRDS(ON):0.626Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFR/U2405

Surface Mount (IRFR2405)

Description TheD-Pakisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraightleadversion(IRFUseries)isforthrough-holemountingapplications.Powerdissipationlevelsupto1.5wattsarepossibleintypicalsurfacemountapplications. ●Surf

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR/U3303

HEXFET Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR/U3303PBF

HEXFET Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR/U3709Z

High Frequency Synchronous Buck Converters for Computer Processor Power

Benefits ●VeryLowRDS(on)at4.5VVGS ●Ultra-LowGateImpedance ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighFrequencySynchronousBuck ConvertersforComputerProcessorPower ●HighFrequencyIsolatedDC-DC ConverterswithSynchronousRectification

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR010

Power MOSFET

FEATURES •Lowdrivecurrent •Surface-mount •Fastswitching •Easeofparalleling •Excellenttemperaturestability •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION ThepowerMOSFETtechnologyisthekeytoVishay’s advancedlin

VishayVishay Siliconix

威世科技威世科技半导体

IRFR010

N-CHANNEL POWER MOSFET

SamsungSamsung Group

三星三星半导体

IRFR010

Power MOSFET

DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd

VishayVishay Siliconix

威世科技威世科技半导体

IRFR010

AVALANCHE AND dv/dt RATED

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFR010

Power MOSFET

DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR010_V01

Power MOSFET

FEATURES •Lowdrivecurrent •Surface-mount •Fastswitching •Easeofparalleling •Excellenttemperaturestability •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION ThepowerMOSFETtechnologyisthekeytoVishay’s advancedlin

VishayVishay Siliconix

威世科技威世科技半导体

IRFR010PBF

Power MOSFET

DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd

VishayVishay Siliconix

威世科技威世科技半导体

IRFR010PBF

Power MOSFET

DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR012

AVALANCHE AND dv/dt RATED

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFR014

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR014

Power MOSFET

FEATURES •DynamicdV/dtrating •Surface-mount(IRFR014,SiHFR014) •Straightlead(IRFU014,SiHFU014) •Availableintapeandreel •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99

VishayVishay Siliconix

威世科技威世科技半导体

详细参数

  • 型号:

    IRFR

  • 制造商:

    IRF

  • 制造商全称:

    International Rectifier

  • 功能描述:

    Power MOSFET(Vdss=100V, Rds(on)=0.21ohm, Id=9.4A)

供应商型号品牌批号封装库存备注价格
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR
22+
SOT-252
6000
终端可免费供样,支持BOM配单
询价
IR
23+
SOT-252
8000
专注配单,只做原装进口现货
询价
IR
23+
SOT-252
8000
专注配单,只做原装进口现货
询价
23+
TO-252
65480
询价
IR
21+
TO252
2700
询价
IR
2023+
TO252
169
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站
询价
IR
11+
TO-252
1809
询价
IR
1923+
TO-252
80000
原装现货优势价格
询价
IR
0535+
DPAK
30
现货原装库存热卖
询价
更多IRFR供应商 更新时间2024-6-18 9:02:00