首页 >IRFIB6N60APBF>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IRFIB6N60APBF | HEXFET Power MOSFET Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,Avalancheanddynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications SwitchModePowerSupply(SMPS) UninterruptablePowerSupply Highspeedpowe | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | |
IRFIB6N60APBF | Power MOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | |
6.2Amps,600/650VoltsN-CHANNELMOSFET DESCRIPTION TheUTC6N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
N-CHANNELPOWERMOSFET | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | ZSELEC | ||
N-ChannelPowerMOSFET | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | NELLSEMI | ||
N-Channel600V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
AvalancheEnergySpecified DESCRITION ·Designedforhighefficiencyswitchmodepowersupply. FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage-:VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance:RDS(on)=1.2Ω(Max) ·AvalancheEnergySpecified ·FastSwitching ·SimpleDriveRequirements | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
600VN-ChannelPowerMOSFET | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | DYELEC | ||
6.2Amps,600/650VoltsN-CHANNELMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
6Amps,600VoltsN-CHANNELMOSFET | CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD 重庆平伟实业重庆平伟实业股份有限公司 | CHONGQING | ||
6.2A,600VN-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
N-CHANNELPOWERMOSFET | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | SUNMATE | ||
N-CHANNELMOSFET | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | ARTSCHIP | ||
N-ChannelPowerMOSFET | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | NELLSEMI | ||
6A600VN-channelenhancedfieldeffecttransistor | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | YFWDIODE | ||
N-ChannelPowerMOSFET | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | NELLSEMI | ||
6Amps,600VoltsN-CHANNELMOSFET | CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD 重庆平伟实业重庆平伟实业股份有限公司 | CHONGQING | ||
600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingp | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | Fuji |
详细参数
- 型号：
IRFIB6N60APBF
- 功能描述：
MOSFET N-Chan 600V 5.5 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay(威世) |
23+ |
标准封装 |
7468 |
原厂直销,大量现货库存,交期快。价格优,支持账期 |
询价 | ||
Vishay Siliconix |
24+ |
TO-220-3 |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
VISHAY |
21+ |
TO-220FP |
7050 |
原装正品 有挂有货 |
询价 | ||
VISHAY |
15+/16+ |
7050 |
TO-220FP |
询价 | |||
VISHAY |
23+ |
TO-220FP |
7050 |
原装现货支持送检 |
询价 | ||
Vishay(威世) |
2249+ |
60520 |
二十余载金牌老企 研究所优秀合供单位 您的原厂窗口 |
询价 | |||
VISHAY |
15+ |
TO-220FP |
2200 |
原装正品长期供货，如假包赔包换 徐小姐13714450367 |
询价 | ||
VishayIR |
07+/08+ |
TO-220F |
2138 |
询价 | |||
IR |
17+ |
TO-220F |
6200 |
询价 | |||
DISCRETE |
50 |
SIX |
3050 |
询价 |
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