首页 >IRFI9630GPBF>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
IRFI9630GPBF | HEXFET짰 Power MOSFET ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | |
IRFI9630GPBF | Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialappl | VishayVishay Siliconix 威世科技 | Vishay | |
LowDistortion750MHzClosed-LoopBufferAmp GENERALDESCRIPTION TheAD9630isamonolithicbufferamplifierthatutilizesapatented,innovative,closed-loopdesigntechniquetoachieveexceptionalgainaccuracy,widebandwidth,andlowdistortion.Slewratelimitinghasbeenovercomeasindicatedbythe1200V/µsslewrate;thisimproveme | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
LowDistortion750MHzClosed-LoopBufferAmp | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
LowDistortion750MHzClosed-LoopBufferAmp GENERALDESCRIPTION TheAD9630isamonolithicbufferamplifierthatutilizesapatented,innovative,closed-loopdesigntechniquetoachieveexceptionalgainaccuracy,widebandwidth,andlowdistortion.Slewratelimitinghasbeenovercomeasindicatedbythe1200V/µsslewrate;thisimproveme | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
LowDistortion750MHzClosed-LoopBufferAmp GENERALDESCRIPTION TheAD9630isamonolithicbufferamplifierthatutilizesapatented,innovative,closed-loopdesigntechniquetoachieveexceptionalgainaccuracy,widebandwidth,andlowdistortion.Slewratelimitinghasbeenovercomeasindicatedbythe1200V/µsslewrate;thisimproveme | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
LowDistortion750MHzClosed-LoopBufferAmp GENERALDESCRIPTION TheAD9630isamonolithicbufferamplifierthatutilizesapatented,innovative,closed-loopdesigntechniquetoachieveexceptionalgainaccuracy,widebandwidth,andlowdistortion.Slewratelimitinghasbeenovercomeasindicatedbythe1200V/µsslewrate;thisimproveme | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
UPSNetworkManagementCard2 | SCHNEIDERSchneider electric 施耐德施耐德电气 | SCHNEIDER | ||
PC133ClockGeneratorforSiS630/PentiumIII&SiS540/Socket7Applications | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | Cypress | ||
PC133ClockGeneratorforSiS630/PentiumIII&SiS540/Socket7Applications | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | Cypress | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa | VishayVishay Siliconix 威世科技 | Vishay | ||
P-CHANNELPOWERMOSFETS FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability | SamsungSamsung Group 三星三星半导体 | Samsung | ||
PowerMOSFET(Vdss=-200V,Rds(on)=0.80ohm,Id=-6.5A) | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
6.5A,200V,0.800Ohm,P-ChannelPowerMOSFETs TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
PowerMOSFETS FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •P-Channel •FastSwitching •EaseofParalleling •SimpleDriveRequirements •ComplianttoRoHSDirective2002/95/EC DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethe designerwiththebestcombinationof | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •P-channel •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutparts | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFETS FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •P-Channel •FastSwitching •EaseofParalleling •SimpleDriveRequirements •ComplianttoRoHSDirective2002/95/EC DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethe designerwiththebestcombinationof | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
详细参数
- 型号:
IRFI9630GPBF
- 功能描述:
MOSFET P-Chan 200V 4.3 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Vishay Siliconix |
24+ |
TO-220-3 |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
VISHAY SEMICONDUCTOR |
23+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
询价 | ||
VISHAY |
11+ |
TO-220FP |
900 |
原装正品长期供货,如假包赔包换 徐小姐13714450367 |
询价 | ||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IR |
22+23+ |
TO-220 |
21794 |
绝对原装正品全新进口深圳现货 |
询价 | ||
VISHAY |
2018+ |
26976 |
代理原装现货/特价热卖! |
询价 | |||
Vishay |
23+ |
TOTO-220FP |
33500 |
全新原装真实库存含13点增值税票! |
询价 | ||
VIS |
2020+ |
TO-220F |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
VISHAY |
最新 |
10748 |
原装正品 现货供应 价格优 |
询价 | |||
IR |
21+ |
TO-220F |
50000 |
终端可免费提供样品,欢迎咨询 |
询价 |
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