IRFBA35N60C资料datasheet下载供应代理-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
35N60A	文件：851.66 Kbytes Page：5 Pages	35A600VN-channelenhancedfieldeffecttransistor	YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司	YFWDIODE
DAM35N60F	文件：260.05 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	DACO DACO	DACO
DAM35N60H	文件：243.21 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	DACO DACO	DACO
FCA35N60	文件：347.93 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=35A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=79mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FCA35N60	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCA35N60	文件：770.04 Kbytes Page：8 Pages	600VN-ChannelMOSFET Description SuperFET™isFarichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Features •650V@TJ=150°C •Typ.RDS(on)=0.079Ω •Ultralow	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCH35N60	文件：436.01 Kbytes Page：8 Pages	N-ChannelSuperFET짰MOSFET Description SuperFET®MOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thistechnologyistailoredtominimizeconductionloss,	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCH35N60	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGW35N60H	文件：635.16 Kbytes Page：6 Pages	DiscreteIGBT(High-SpeedVseries)600V/35A Features Lowpowerloss Lowswitchingsurgeandnoise Highreliability,highruggedness(RBSOA,SCSOAetc.) Applications Uninterruptiblepowersupply Powercoditionner Powerfactorcorrectioncircuit	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
FGW35N60HD	文件：640.08 Kbytes Page：8 Pages	DiscreteIGBT(High-SpeedVseries)600V/35A 600V/35A Features Lowpowerloss Lowswitchingsurgeandnoise Highreliability,highruggedness(RBSOA,SCSOAetc.) Applications Uninterruptiblepowersupply Powercoditionner Powerfactorcorrectioncircuit	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
ICE35N60W	文件：964.41 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	MICROSS MICROSS	MICROSS
ICE35N60W	文件：589.87 Kbytes Page：8 Pages	N-ChannelEnhancementModeMOSFET	ICEMOSIcemos Technology Icemos 技术	ICEMOS
ISPW35N60CFD	文件：335.61 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤118mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXDH35N60B	文件：101.3 Kbytes Page：4 Pages	IGBTwithoptionalDiode HighSpeed,LowSaturationVoltage Features ●NPTIGBTtechnology ●lowswitchinglosses ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●optionalultrafastdiode ●Internationalstandard	IXYS IXYS Integrated Circuits Division	IXYS
IXDP35N60B	文件：101.3 Kbytes Page：4 Pages	IGBTwithoptionalDiode HighSpeed,LowSaturationVoltage Features ●NPTIGBTtechnology ●lowswitchinglosses ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●optionalultrafastdiode ●Internationalstandard	IXYS IXYS Integrated Circuits Division	IXYS
SIHB35N60E	文件：162.62 Kbytes Page：7 Pages	ESeriesPowerMOSFET	VishayVishay Siliconix 威世科技	Vishay
SIHB35N60E	文件：215.86 Kbytes Page：9 Pages	ESeriesPowerMOSFET	VishayVishay Siliconix 威世科技	Vishay
SIHB35N60EF	文件：192.22 Kbytes Page：10 Pages	EFSeriesPowerMOSFETWithFastBodyDiode	VishayVishay Siliconix 威世科技	Vishay
SIHF35N60E	文件：183.32 Kbytes Page：9 Pages	ESeriesPowerMOSFET FEATURES •Aspecificonresistance(m-cm2)reductionof 25 •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance	VishayVishay Siliconix 威世科技	Vishay
SIHF35N60E	文件：151.17 Kbytes Page：7 Pages	ESeriesPowerMOSFET	VishayVishay Siliconix 威世科技	Vishay

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详细参数

型号：
IRFBA35N60C
功能描述：
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 35A I(D) | TO-273AA

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳兆威电子有限公司	IRFBA35N60C	IR	23+	TO-220	90000	只做原装全系列供应价格优势可开增票	询价
深圳市宏捷佳电子科技有限公司	IRFBA3803	IR/VISHAY	23+	TO-TO-220	12300	全新原装真实库存含13点增值税票!	询价
深圳市国宇半导体科技有限公司	IRFBA3803	IR/VISHAY	23+	TO-220	10000	公司只做原装正品	询价
深圳市河锋鑫科技有限公司	IRFBA3803	IR/VISHAY	TO-220	22+	6000	十年配单,只做原装	询价
易创佳业科技（深圳）有限公司	IRFBA3803	IR/VISHAY	23+	TO-220	6000	原装正品，支持实单	询价
深圳市富芯乐电子科技有限公司	IRFBA3803	IR	22+	SOT-3766&NBS	4500	全新原装品牌专营	询价
深圳市创新迹电子有限公司	IRFBA3803	IR/VISHAY	22+	TO-220	25000	只做原装进口现货,专注配单	询价
深圳市惊羽科技有限公司	IRFBA3803	VISHAY-威世	24+25+/26+27+	TO-220-3	78800	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
深圳市安富世纪电子有限公司	IRFBA3803	IR	23+	TO-220	8000	只做原装现货	询价
深圳市利加科技有限公司	IRFBA3803P	IR	16+	TO-220	10000	全新原装现货	询价

更多IRFBA35N60C供应商更新时间2024-4-28 17:18:00

详细参数

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