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IRF9530NSPBF中文资料PDF规格书
IRF9530NSPBF规格书详情
VDSS = -100V
RDS(on) = 0.20Ω
ID = -14A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9530NL) is available for low profile applications.
Advanced Process Technology
Surface Mount (IRF9530NS)
Low-profile through-hole (IRF9530NL)
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
Lead-Free
产品属性
- 型号:
IRF9530NSPBF
- 功能描述:
MOSFET 1 P-CH -100V HEXFET 200mOhms 38.7nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Infineon Technologies |
21+ |
TO2633 D2Pak (2 Leads + Tab) T |
13880 |
公司只售原装,支持实单 |
询价 | ||
INFINEON |
2019 |
D2PAK |
55000 |
原装进口假一罚十 |
询价 | ||
IR |
22+ |
TO263 |
12245 |
现货,原厂原装假一罚十! |
询价 | ||
IR |
20+ |
TO-263 |
10000 |
询价 | |||
IR |
22+ |
TO-263 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
IR |
2020+ |
TO-263 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
IR |
2021+ |
SOIC8 |
3500 |
十年专营原装现货,假一赔十 |
询价 | ||
2322+ |
NA |
33220 |
无敌价格 主销品牌 正规渠道订货 免费送样!!! |
询价 | |||
IR |
23+ |
TO-263 |
65400 |
询价 | |||
IR |
TO-263 |
265209 |
假一罚十原包原标签常备现货! |
询价 |