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IRF7807VD1中文资料PDF规格书
IRF7807VD1规格书详情
Description
The FETKY™ family of Co-Pack HEXFETMOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.
• Co-Pack N-channel HEXFET Power MOSFET
and Schottky Diode
• Ideal for Synchronous Rectifiers in DC-DC
Converters Up to 5A Output
• Low Conduction Losses
• Low Switching Losses
• Low Vf Schottky Rectifier
• 100 RG Tested
产品属性
- 型号:
IRF7807VD1
- 功能描述:
MOSFET N-CH 30V 8.3A 8-SOIC
- RoHS:
否
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
FETKY™
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IOR |
23+ |
S0P/8 |
8000 |
全新原装现货,欢迎来电咨询 |
询价 | ||
Infineon Technologies |
23+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
询价 | ||
IR |
2020+ |
SOIC8 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
IR |
21+ROHS |
SOP-8 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
IOR |
23+ |
SO-8 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
询价 | ||
IOR |
01+ |
SOP-8P |
100 |
询价 | |||
IR |
05+ |
原厂原装 |
2136 |
只做全新原装真实现货供应 |
询价 | ||
IR |
20+ |
SOP-8 |
90000 |
全新原装正品/库存充足 |
询价 | ||
Infineon Technologies |
22+ |
8SOIC |
9000 |
原厂渠道,现货配单 |
询价 | ||
Infineon Technologies |
21+ |
8SOIC |
13880 |
公司只售原装,支持实单 |
询价 |