IRF7807D2中文资料PDF规格书
IRF7807D2规格书详情
Description
The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.
• Co-Pack N-channel HEXFET® Power MOSFET
and Schottky Diode
• Ideal for Synchronous Rectifiers in DC-DC
Converters up to 5A Output
• Low Conduction Losses
• Low Switching Losses
• Low Vf Schottky Rectifier
产品属性
- 型号:
IRF7807D2
- 功能描述:
MOSFET N-CH 30V 8.3A 8-SOIC
- RoHS:
否
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
FETKY™
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
SOP |
6000 |
原装现货,长期供应,终端可账期 |
询价 | |||
IRF |
22+ |
SOP-8P |
12800 |
本公司只做进口原装!优势低价出售! |
询价 | ||
IR |
20+ |
SOP |
2960 |
诚信交易大量库存现货 |
询价 | ||
IR |
22+ |
SOP |
32350 |
原装正品 假一罚十 公司现货 |
询价 | ||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IRF |
23+ |
SOP-8P |
35890 |
询价 | |||
IR |
2019 |
8-SO |
55000 |
原装进口假一罚十 |
询价 | ||
IR |
22+ |
SMD |
8000 |
原装正品支持实单 |
询价 | ||
IR |
21+ |
65230 |
询价 | ||||
Infineon Technologies |
2022+ |
8-SOIC(0.154 |
38550 |
询价 |