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MX7705EUE+

16-Bit,Low-Power,2-Channel,Sigma-DeltaADC

MaximMaximIntegrated

美信半导体

MX7705EWE

16-Bit,Low-Power,2-Channel,Sigma-DeltaADC

MaximMaximIntegrated

美信半导体

MX7705EWE

16-Bit,Low-Power,2-Channel,Sigma-DeltaADC

MaximMaximIntegrated

美信半导体

MX7705EWE+

16-Bit,Low-Power,2-Channel,Sigma-DeltaADC

MaximMaximIntegrated

美信半导体

NCV7705

Mirror-ModuleDriver-IC

TheNCV7705/NCV7706isapowerfulDriver−ICforautomotive bodycontrolsystems.TheICisdesignedtocontrolseveralloadsin thefrontdoorofavehicle.ThemonolithicICisabletocontrolmirror functionslikemirrorpositioning,heatingandfolding.Inaddition, NCV7706includestheele

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NCV7705

Mirror-ModuleDriver-IC

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NCV7705A

Mirror-ModuleDriver-IC

TheNCV7705/NCV7706isapowerfulDriver−ICforautomotive bodycontrolsystems.TheICisdesignedtocontrolseveralloadsin thefrontdoorofavehicle.ThemonolithicICisabletocontrolmirror functionslikemirrorpositioning,heatingandfolding.Inaddition, NCV7706includestheele

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NDL7705P

LASERDIODE

1500nmOPTICALFIBERCOMMUNICATIONS InGaAsPMQW-DFBLASERDIODECOAXIALMODULE FEATURES •Peakemissionwavelengthp=1550nm •OpticaloutputpowerPf=2.0mW •WideoperatingtemperaturerangeTC=40to+85C •/4-phase-shiftedDFB •InGaAsmonitorPIN-PD •Internalopticaliso

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NDL7705P

1500nmOPTICALFIBERCOMMUNICATIONSInGaAsPMQW-DFBLASERDIODECOAXIALMODULE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NDL7705P

CWLIGHTSOURCEInGaAsPSTRAINEDMQW-DFBLASERDIODEMODULEFORD-WDMAPPLICATIONS

DESCRIPTION TheNX8563LBSeriesisa1550nmlaserdiodewithPolarizationMaintainFiber(PMF). ThisdeviceisdesignedasCWlightsourceandidealforD-WDMtransmissionsystemsinwhichexternalmodulatorsareused. FEATURES •OutputpowerPf=10mWMIN. •Wavelengthavailabilityλp=1

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NDL7705P

1500nmOPTICALFIBERCOMMUNICATIONSInGaAsPMQW-DFBLASERDIODECOAXIALMODULE

DESCRIPTION TheNDL7705PSeriesisa1550nmphase-shiftedDFB(DistributedFeed-Back)laserdiodemodulewithopticalisolator.MultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof40to+85C. Itisdesig

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NDL7705P

1310nmOPTICALFIBERCOMMUNICATIONSInGaAsPMQW-DFBLASERDIODECOAXIALMODULE

DESCRIPTION TheNDL7603PSeriesisa1310nmphase-shiftedDFB(distributedfeedback)laserdiodemodulewithsinglemodefiber.TheMultipleQuantumWell(st-MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverawidetemperaturerangeof-40to+85°C.It

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NDL7705P

1550nmCWLIGHTSOURCEInGaAsPSTRAINEDMQW-DFBLASERDIODEMODULE

DESCRIPTION TheNX8562LBisa1550nmlaserdiodewithPolarizationMaintainFiber(PMF). ThisdeviceisdesignedasCWlightsourceandidealfortransmissionsystemsinwhichexternalmodulatorsareused. FEATURES •OutputpowerPf=20mWMIN. •WavelengthselectableforITU-Tstandards

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NDL7705P

1550nmOPTICALFIBERCOMMUNICATIONSEAMODULATORINTEGRATEDMQW-DFBLASERDIODEMODULEFOR2.5Gb/sULTRALONG-REACHAPPLICATIONS

DESCRIPTION TheNDL7910PisanEAmodulatorintegrated1550nmDFB-LDfor2.5Gb/s.ThenewlydevelopedbandgapenergycontrolledSelectiveMOVPEtechnologyisutilizedasfabricationmethod.Itisdesignedfor2.5Gb/sultralongreachapplications. FEATURES •Integratedelectroabsorptionmodu

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NDL7705P

1550nmOPTICALFIBERCOMMUNICATIONSInGaAsPSTRAINEDMQWDFBDC-PBHLASERDIODEMODULE

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NDL7705PC

1500nmOPTICALFIBERCOMMUNICATIONSInGaAsPMQW-DFBLASERDIODECOAXIALMODULE

DESCRIPTION TheNDL7705PSeriesisa1550nmphase-shiftedDFB(DistributedFeed-Back)laserdiodemodulewithopticalisolator.MultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof40to+85C. Itisdesig

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NDL7705PC

1500nmOPTICALFIBERCOMMUNICATIONSInGaAsPMQW-DFBLASERDIODECOAXIALMODULE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NDL7705PC

LASERDIODE

1500nmOPTICALFIBERCOMMUNICATIONS InGaAsPMQW-DFBLASERDIODECOAXIALMODULE FEATURES •Peakemissionwavelengthp=1550nm •OpticaloutputpowerPf=2.0mW •WideoperatingtemperaturerangeTC=40to+85C •/4-phase-shiftedDFB •InGaAsmonitorPIN-PD •Internalopticaliso

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NDL7705PD

LASERDIODE

1500nmOPTICALFIBERCOMMUNICATIONS InGaAsPMQW-DFBLASERDIODECOAXIALMODULE FEATURES •Peakemissionwavelengthp=1550nm •OpticaloutputpowerPf=2.0mW •WideoperatingtemperaturerangeTC=40to+85C •/4-phase-shiftedDFB •InGaAsmonitorPIN-PD •Internalopticaliso

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NDL7705PD

1500nmOPTICALFIBERCOMMUNICATIONSInGaAsPMQW-DFBLASERDIODECOAXIALMODULE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

详细参数

  • 型号:

    IRF7705

  • 功能描述:

    MOSFET P-CH 30V 8A 8-TSSOP

  • RoHS:

  • 类别:

    分离式半导体产品 >> FET - 单

  • 系列:

    HEXFET®

  • 标准包装:

    1,000

  • 系列:

    MESH OVERLAY™ FET

  • 型:

    MOSFET N 通道,金属氧化物 FET

  • 特点:

    逻辑电平门

  • 漏极至源极电压(Vdss):

    200V 电流 - 连续漏极(Id) @ 25°

  • C:

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C:

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大):

    4V @ 250µA 闸电荷(Qg) @

  • Vgs:

    72nC @ 10V 输入电容(Ciss) @

  • Vds:

    1560pF @ 25V 功率 -

  • 最大:

    40W

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3 整包

  • 供应商设备封装:

    TO-220FP

  • 包装:

    管件

供应商型号品牌批号封装库存备注价格
IR
21+
TSSOP8
6000
全新原装 公司现货 价格优
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IOR
22+23+
TSSOP8
30100
绝对原装正品全新进口深圳现货
询价
IR
1709+
TSSOP-8
32500
普通
询价
IR
21+
TSSOP8
50000
终端可免费提供样品,欢迎咨询
询价
IR
20+
TSSOP8
6000
诚信经营..品质保证..价格优势
询价
INFINEON
1503+
SSOP-8
3000
就找我吧!--邀您体验愉快问购元件!
询价
IR
TSSOP8
265209
假一罚十原包原标签常备现货!
询价
Infineon
22+
NA
2118
加我QQ或微信咨询更多详细信息,
询价
IR
23+
TSSOP8
50000
全新原装正品现货,支持订货
询价
更多IRF7705供应商 更新时间2024-6-18 17:37:00