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IRF7401PBF中文资料PDF规格书
IRF7401PBF规格书详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
● Generation V Technology
● Ultra Low On-Resistance
● N-Channel Mosfet
● Surface Mount
● Available in Tape & Reel
● Dynamic dv/dt Rating
● Fast Switching
● Lead-Free
产品属性
- 型号:
IRF7401PBF
- 功能描述:
MOSFET 20V 1 N-CH HEXFET 22mOhms 32nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
21+ |
SOP8 |
20000 |
原装进口正品现货 |
询价 | ||
23+ |
N/A |
30050 |
正品授权货源可靠 |
询价 | |||
Infineon Technologies |
23+ |
8SOIC |
9000 |
原装正品,支持实单 |
询价 | ||
INFINEON |
1845+ |
NA |
1804 |
原装正品 价格极优 |
询价 | ||
Infineon Technologies |
22+ |
8SOIC |
9000 |
原厂渠道,现货配单 |
询价 | ||
IR |
21+ |
65230 |
询价 | ||||
IR |
2048+ |
SOP-8 |
6541 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
IR |
SOP-8 |
12000 |
原装现货,长期供应,终端账期支持 |
询价 | |||
IR |
23+ |
SOP8 |
7750 |
全新原装优势 |
询价 | ||
IR |
23+ |
NA/ |
3285 |
原装现货,当天可交货,原型号开票 |
询价 |