IRF740中文资料PDF规格书
IRF740规格书详情
GENERAL DESCRIPTION
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
FEATURES
◆ Robust High Voltage Termination
◆ Avalanche Energy Specified
◆ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
◆ Diode is Characterized for Use in Bridge Circuits
◆ IDSS and VDS(on) Specified at Elevated Temperature
产品属性
- 型号:
IRF740
- 功能描述:
MOSFET N-Chan 400V 10 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法半导体 |
21+ |
TO-220-3 |
6000 |
原装现货 |
询价 | ||
ST/意法 |
23+ |
NA/ |
17 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IR |
2016+ |
TO220 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
IR |
2020+ |
TO-220 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
IR |
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 | |||
ST/意法半导体 |
23+ |
TO-220-3 |
30000 |
原装正品公司现货,假一赔十! |
询价 | ||
IR |
2020+ |
TO-220AB |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
IR |
24+ |
TO 220 |
161472 |
明嘉莱只做原装正品现货 |
询价 | ||
ST/意法半导体 |
21+ |
TO-220-3 |
8080 |
只做原装,质量保证 |
询价 | ||
IR |
23+ |
TO220 |
3000 |
全新原装、诚信经营、公司现货销售 |
询价 |
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