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IRF737LCPBF中文资料PDF规格书
IRF737LCPBF规格书详情
Description
This new series of Low Charge HEXFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new Low Charge MOSFETs.
These device improvements combined with the proven ruggedness and reliability that are characteristics of HEXFETs offer the designer a new standard in power transistors for switching applications.
● Reduced Gate Drive Requirement
● Enhanced 30V VGS Rating
● Reduced CISS, COSS, CRSS
● Extremely High Frequency Operation
● Repetitive Avalanche Rated
● Lead-Free
产品属性
- 型号：
IRF737LCPBF
- 功能描述：
MOSFET N-Chan 300V 6.1 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
SOT263 |
8000 |
原装正品支持实单 |
询价 | ||
VishayIR |
07+/08+ |
TO-220AB |
276 |
询价 | |||
IR |
TO-220 |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
VISHAY-威世 |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
IR |
23+ |
NA/ |
4357 |
原装现货,当天可交货,原型号开票 |
询价 | ||
IR |
05+ |
原厂原装 |
101 |
只做全新原装真实现货供应 |
询价 | ||
Vishay Siliconix |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
询价 | ||
Vishay Siliconix |
2022+ |
TO-220-3 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
IR |
23+ |
TO-TO-220AB |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
I |
23+ |
TO-220AB |
10000 |
公司只做原装正品 |
询价 |
