IRF6637中文资料PDF规格书
IRF6637规格书详情
Description
The IRF6637 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.
● Lead and Bromide Free
● Low Profile (<0.7 mm)
● Dual Sided Cooling Compatible
● Ultra Low Package Inductance
● Optimized for High Frequency Switching
● Ideal for CPU Core DC-DC Converters
● Optimized for both Sync.FET and some Control FET application
● Low Conduction and Switching Losses
● Compatible with existing Surface Mount Techniques
产品属性
- 型号:
IRF6637
- 功能描述:
MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
06+ |
QFN |
710 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
22+ |
9800 |
只做原装正品假一赔十!正规渠道订货! |
询价 | |||
IR |
2023+ |
SMD |
4530 |
专注全新正品,优势现货供应 |
询价 | ||
IR |
06+ |
QFN |
710 |
全新原装,价格优势 |
询价 | ||
IR |
2022 |
DirectFET |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
IR |
2008++ |
SMD |
7700 |
新进库存/原装 |
询价 | ||
IR |
QFN |
6000 |
原装现货,长期供应,终端可账期 |
询价 | |||
IR |
DirectFET |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
IR |
2122+ |
66000 |
全新原装正品,价格美丽,优势渠道 |
询价 | |||
IR |
21+ |
QFN |
10000 |
原装现货假一罚十 |
询价 |