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IRF6636TRPBF中文资料PDF规格书
IRF6636TRPBF规格书详情
Description
The IRF6636PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.
● RoHs Compliant
● Lead-Free (Qualified up to 260°C Reflow)
● Application Specific MOSFETs
● Ideal for CPU Core DC-DC Converters
● Low Conduction Losses
● High Cdv/dt Immunity
● Low Profile (<0.7mm)
● Dual Sided Cooling Compatible
● Compatible with existing Surface Mount Techniques
产品属性
- 型号:
IRF6636TRPBF
- 功能描述:
MOSFET 20V 1 N-CH HEXFET DIRECTFET(ST)
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
2023+ |
MG-WDSON-5 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
Infineon/英飞凌 |
23+ |
MG-WDSON-5 |
7188 |
秉承只做原装 终端我们可以提供技术支持 |
询价 | ||
Infineon/英飞凌 |
23+ |
MG-WDSON-5 |
25630 |
原装正品 |
询价 | ||
Infineon Technologies |
21+ |
SOT-323 |
21000 |
专业分立半导体,原装渠道正品现货 |
询价 | ||
IR |
1023 |
SMD |
2733 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
International Rectifier |
2022+ |
1 |
全新原装 货期两周 |
询价 | |||
IR |
23+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
Infineon/英飞凌 |
23+ |
MG-WDSON-5 |
25000 |
原装正品,假一赔十! |
询价 | ||
Infineon Technologies |
23+ |
DirectFET? Isometric ST |
9000 |
原装正品,支持实单 |
询价 | ||
IR |
21+ |
SMD |
4550 |
全新原装现货 |
询价 |