IRF6608中文资料PDF规格书
IRF6608规格书详情
Description
The IRF6608 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.
● Application Specific MOSFETs
● Ideal for CPU Core DC-DC Converters
● Low Conduction Losses
● Low Switching Losses
● Low Profile (<0.7 mm)
● Dual Sided Cooling Compatible
● Compatible with existing Surface Mount Techniques
产品属性
- 型号:
IRF6608
- 功能描述:
MOSFET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
07+/08+ |
DirectFETtradeIso |
38400 |
询价 | |||
Infineon Technologies |
22+ |
DirectFET? Isometric ST |
9000 |
原厂渠道,现货配单 |
询价 | ||
INTERNATIONALRECTIFIER |
2020+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
Infineon Technologies |
23+ |
DirectFET? Isometric ST |
9000 |
原装正品,支持实单 |
询价 | ||
IR |
SOP |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
InfineonTechnologies |
2019+ |
DirectFET?IsometricST |
65500 |
原装正品货到付款,价格优势! |
询价 | ||
IR |
22+ |
FQN |
8000 |
原装正品支持实单 |
询价 | ||
IOR |
22+ |
QFN |
32350 |
原装正品 假一罚十 公司现货 |
询价 | ||
IOR |
06+PBF |
QFN |
938 |
现货 |
询价 | ||
IR |
21+ |
DirectFET |
10000 |
原装现货假一罚十 |
询价 |