IRF6601中文资料PDF规格书
IRF6601规格书详情
Description
The IRF6601 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.
● Application Specific MOSFETs
● Ideal for CPU Core DC-DC Converters
● Low Conduction Losses
● Low Switching Losses
● Low Profile (<0.7 mm)
● Dual Sided Cooling Compatible
● Compatible with exisiting Surface Mount
Techniques
产品属性
- 型号:
IRF6601
- 功能描述:
MOSFET N-CH 20V 26A DIRECTFET
- RoHS:
否
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
HEXFET®
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
XX |
XX |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
IR |
02+ |
SMD |
1300 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
23+ |
QFN |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
IR |
02+ |
SMD |
1300 |
全新原装,支持实单,假一罚十,德创芯微 |
询价 | ||
XX |
23+ |
XX |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IR |
0408 |
122 |
公司优势库存 热卖中! |
询价 | |||
ADI |
2022+ |
LFCSP-32 |
6000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
Infineon Technologies |
21+ |
DIRECTFET? MT |
4800 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
询价 | ||
IR |
21+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
xx |
21+ |
XX |
10000 |
原装现货假一罚十 |
询价 |