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IRF1010EZSPBF中文资料PDF规格书
IRF1010EZSPBF规格书详情
Description
This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
产品属性
- 型号:
IRF1010EZSPBF
- 功能描述:
MOSFET 60V 1 N-CH HEXFET 8.5mOhms 58nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
2020+ |
TO-263 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
Infineon(英飞凌) |
23+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
IR/INFINEON |
16+ |
TO-263 |
200 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
VBsemi |
2232+ |
TO263 |
6616 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
INFINEON |
21+ |
TO-263 |
60000 |
原装正品进口现货 |
询价 | ||
IR |
TO-263 |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
IR |
07+/08+ |
TO-263 |
400 |
询价 | |||
Infineon(英飞凌) |
23+ |
N/A |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
询价 | ||
INFINEON-英飞凌 |
24+25+/26+27+ |
TO-263-3 |
9328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
VBsemi |
24+ |
TO263 |
9000 |
只做原装正品 有挂有货 假一赔十 |
询价 |