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IRF1010EZL中文资料PDF规格书
IRF1010EZL规格书详情
Description
This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
产品属性
- 型号:
IRF1010EZL
- 功能描述:
MOSFET N-CH 60V 75A TO-262
- RoHS:
否
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
HEXFET®
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
2020+ |
TO-262 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
Infineon Technologies |
2022+ |
TO-262-3,长引线,I2Pak,TO-26 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
INFINEON/英飞凌 |
23+ |
TO-262 |
89630 |
当天发货全新原装现货 |
询价 | ||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
Infineon Technologies |
23+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
询价 | ||
IR |
2020+ |
TO-262 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
IR |
20+ |
TO-262 |
38900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
IR |
2016+ |
TO-262 |
6528 |
房间原装进口现货假一赔十 |
询价 | ||
IR |
23+ |
TO-262 |
7600 |
全新原装现货 |
询价 | ||
Infineon Technologies |
21+ |
TO2623 Long Leads I2Pak TO262A |
13880 |
公司只售原装,支持实单 |
询价 |