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IRF1010EZSPBF中文资料PDF规格书
IRF1010EZSPBF规格书详情
Description
This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
产品属性
- 型号：
IRF1010EZSPBF
- 功能描述：
MOSFET 60V 1 N-CH HEXFET 8.5mOhms 58nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
21+ |
D2PAK(TO263) |
6000 |
原装正品 |
询价 | ||
IR |
2020+ |
TO-263 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
IR/INFINEON |
16+ |
TO-263 |
300 |
只做进口原装假一赔百 |
询价 | ||
IR |
21+ROHS |
30265 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
VBSEMI |
19+ |
D2PAK |
29600 |
绝对原装现货,价格优势! |
询价 | ||
VBSEMI/台湾微碧 |
23+ |
D2PAK |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
INFINEON |
21+ |
TO-263 |
60000 |
原装正品进口现货 |
询价 | ||
IR |
07+/08+ |
TO-263 |
400 |
询价 | |||
Infineon(英飞凌) |
23+ |
N/A |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
询价 | ||
INFINEON/英飞凌 |
24+23+ |
12580 |
16年现货库存供应商终端BOM表可配单提供样品 |
询价 |
