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IRF	文件：74.26 Kbytes Page：3 Pages	Inductors Epoxy Conformal Coated Uniform Roll Coated FEATURES •Flame-retardantcoatingandcolorbandidentification •Uniformcoatingisexcellentforautomaticinsertion •Availableinbulk,ammoandreelpackperEIARS/296 •SuperiorelectricalspecificationshighQandselfresonantfrequency,lowDCresistance,highratedDCcurrent TEST	VishayVishay Siliconix 威世科技	Vishay
IRF01ER100K	文件：74.26 Kbytes Page：3 Pages	Inductors Epoxy Conformal Coated Uniform Roll Coated FEATURES •Flame-retardantcoatingandcolorbandidentification •Uniformcoatingisexcellentforautomaticinsertion •Availableinbulk,ammoandreelpackperEIARS/296 •SuperiorelectricalspecificationshighQandselfresonantfrequency,lowDCresistance,highratedDCcurrent TEST	VishayVishay Siliconix 威世科技	Vishay
IRF034	文件：144.06 Kbytes Page：7 Pages	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) TheHEXFET®technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRF044	文件：146.64 Kbytes Page：7 Pages	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) ProductSummary TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorrever	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRF044	文件：48.34 Kbytes Page：2 Pages	Simple Drive Requirements DESCRIPTION •DrainCurrentID=44A@TC=25℃ •DrainSourceVoltage- :VDSS=60V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.028Ω(Max) •SimpleDriveRequirements APPLICATIONS •Switchingpowersupplies •Motorcontrols,InvertersandChoppers •Audioamplifiersandhighen	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IRF054	文件：146.17 Kbytes Page：7 Pages	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) 60V,N-CHANNEL TheHEXFET™technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superior	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRF064N	文件：107.54 Kbytes Page：8 Pages	Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A?? FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,providesthedesigne	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRF-1	文件：74.26 Kbytes Page：3 Pages	Inductors Epoxy Conformal Coated Uniform Roll Coated FEATURES •Flame-retardantcoatingandcolorbandidentification •Uniformcoatingisexcellentforautomaticinsertion •Availableinbulk,ammoandreelpackperEIARS/296 •SuperiorelectricalspecificationshighQandselfresonantfrequency,lowDCresistance,highratedDCcurrent TEST	VishayVishay Siliconix 威世科技	Vishay
IRF100B201	文件：844.05 Kbytes Page：9 Pages	100 V N-Channel MOSFET Benefits ImprovedGate,AvalancheandDynamicdV/dtRuggedness FullyCharacterizedCapacitanceandAvalancheSOA EnhancedbodydiodedV/dtanddI/dtCapability Lead-Free,RoHSCompliant,Halogen-Free VDS=100V ID=192A RDS(ON)(atVGS=10V)	UMWUMW 友台友台半导体	UMW
IRF101	文件：146.34 Kbytes Page：5 Pages	N-Channel Power MOSFETs, 27 A, 60-100V	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
IRF1010E	文件：195.51 Kbytes Page：8 Pages	Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A? •AdvancedProcessTechnology •UltraLowOn-Resistance •Dynamicdv/dtRating •175°COperatingTemperature •FastSwitching •FullyAvalancheRated Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveex	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRF1010EL	文件：123.94 Kbytes Page：10 Pages	Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?? Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRF1010ELPBF	文件：218.72 Kbytes Page：10 Pages	HEXFET Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRF1010EPBF	文件：231.86 Kbytes Page：8 Pages	HEXFET짰 Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRF1010ES	文件：123.94 Kbytes Page：10 Pages	Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?? Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRF1010ESPBF	文件：218.72 Kbytes Page：10 Pages	HEXFET Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRF1010EZ	文件：285.31 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRF1010EZ	文件：296.01 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IRF1010EZL	文件：285.31 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRF1010EZLPBF	文件：285.31 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF

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型号：
IRF
制造商：
VISHAY
制造商全称：
Vishay Siliconix
功能描述：
Inductors Epoxy Conformal Coated Uniform Roll Coated

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	IRF	IR	22+	263	6000	终端可免费供样,支持BOM配单	询价
深圳市创新迹电子有限公司	IRF	IR	23+	263	8000	专注配单,只做原装进口现货	询价
深圳市安富世纪电子有限公司	IRF	IR	23+	263	8000	专注配单,只做原装进口现货	询价
深圳廊盛科技有限公司	IRFZ48ZPBF	IR	2022	TO-220	80000	原装现货,OEM渠道,欢迎咨询	询价
深圳市川蓝电子科技有限公司	IRF640NPBF	Infineon/英飞凌	1632+	TO-220	13268	原包装原标现货,假一罚十,	询价
深圳市汇莱威科技有限公司	IRF740FI	ST			589220	16余年资质绝对原盒原盘更多数量	询价
深圳市科达星科技有限公司	IRF9335TRPBF	Infineon(英飞凌)	23+	N/A	6000	场效应管(MOSFET)	询价
深圳市永贝尔科技有限公司	IRFF130	GESS	23+	NA	39960	只做进口原装,终端工厂免费送样	询价
深圳兆威电子有限公司	IRF5305STRLPBF	IR	23+	SOT-263	90000	只做原装全系列供应价格优势可开增票	询价
华富测量(深圳)传感技术有限公司	IRFN48N50	原厂	2023+	模块	600	专营模块,继电器,公司原装现货	询价

更多IRF供应商更新时间2024-5-16 14:00:00

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