IPP075N15N3G

OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr

IPP075N15N3G

3 Power-Transistor

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr

IPP075N15N3-G

OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr

IPP075N15N3

N-Channel MOSFET Transistor

IPP075N15N3-G

OptiMOS 3 Power-Transistor

IPP075N15N3GXKSA1

OptiMOS 3 Power-Transistor

FDB075N15A

IscN-ChannelMOSFETTransistor

FDB075N15A

N-ChannelPowerTrench짰MOSFET

FDP075N15A

N-ChannelPowerTrench짰MOSFET150V,130A,7.5m廓

FDP075N15A

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=130A@TC=25℃ ·DrainSourceVoltage :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D