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IPP075N15N3G

OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPP075N15N3G

3 Power-Transistor

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPP075N15N3GXKSA1

OptiMOS 3 Power-Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IIPP075N15N3

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPA075N15N3

IscN-ChannelMOSFETTransistor

•FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplication

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPA075N15N3G

MaterialContentDataSheet

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPA075N15N3G

OptiMOS3Power-Transistor

Features •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPI075N15N3

iscN-ChannelMOSFETTransistor

•DESCRITION •Efficientandreliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤7.5mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandre

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPI075N15N3G

3Power-Transistor

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPI075N15N3G

OptiMOS??Power-TransistorFeaturesExcellentgatechargexRDS(on)product(FOM)

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPI075N15N3-G

OptiMOS3Power-Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPI075N15N3-G

OptiMOS??Power-TransistorFeaturesExcellentgatechargexRDS(on)product(FOM)

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPP075N15N3

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    IPP075N15N3G

  • 制造商:

    Infineon Technologies AG

  • 功能描述:

    MOSFET N-Ch 150V 100A OptiMOS3 TO220

供应商型号品牌批号封装库存备注价格
IR
2020+
TO-220
22000
全新原装正品 现货库存 价格优势
询价
INFINEON
22+
sot
6600
正品渠道现货,终端可提供BOM表配单。
询价
INFINEON/英飞凌
24+
TO-220AB
10000
只做原装欢迎含税交易,假一赔十,放心购买
询价
INFINEO
16+
TO-220
20508
全新原装/深圳现货库2
询价
Infineon/英飞凌
2017+
TO-220
9000
原装正品现货,可开13点税
询价
INFINEON/英飞凌
2021+
TO-220
18061
原装进口假一罚十
询价
INFINEON/英飞凌
20+原装正品
TO-220
6000
大量现货,免费发样。
询价
INFINEON
1535CN
TO-220AB
3052
原厂直销
询价
INFINEON/英飞凌
2021+
TO-220
3580
原装现货/15年行业经验欢迎询价
询价
INFINEON
20+
SOT-23
50000
询价
更多IPP075N15N3G供应商 更新时间2024-6-19 9:04:00