首页 >IPD65R380E6>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

IPD65R380E6

650V CoolMOS E6 Power Transistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPD65R380E6

N-Channel MOSFET Transistor

•DESCRITION •Veryhighcommutationruggedness •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.38Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPD65R380E6

Metal Oxide Semiconductor Field Effect Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPD65R380E6_13

Metal Oxide Semiconductor Field Effect Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IIPD65R380E6

N-ChannelMOSFETTransistor

•DESCRITION •Veryhighcommutationruggedness •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.38Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IIPP65R380E6

N-ChannelMOSFETTransistor

•DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.38Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPA65R380E6

iscN-ChannelMOSFETTransistor

•FEATURES •WithTO-220Fpackaging •Highspeedswitching •Veryhighcommutationruggedness •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPA65R380E6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPA65R380E6

650VCoolMOSE6PowerTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPP65R380E6

650VCoolMOSE6PowerTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPP65R380E6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPP65R380E6

N-ChannelMOSFETTransistor

•DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.38Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    IPD65R380E6

  • 功能描述:

    MOSFET 650V CoolMOS E6 Power Transistor

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
Infineon/英飞凌
20+
TO-252
16300
终端可免费提供样品,欢迎咨询
询价
INFINEON
SOT-252
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
询价
Infineon/英飞凌
19+
TO-252
8000
原装正品现货,可开13点税
询价
INFINEON/英飞凌
2021+
SOT-252
16894
原装进口假一罚十
询价
INFINEO
2020+
TO-252
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
INFINEON
NA
50
全新原装!优势库存热卖中!
询价
INFINEON
23+
DPAK(TO-252)
12300
全新原装真实库存含13点增值税票!
询价
INFINEON/英飞凌
21+
TO-252
6000
原装正品
询价
INFINEON/英飞凌
22+
TO-252
2500
只做原装进口 免费送样!!
询价
INFINEON
23+
TO252
90000
原装现货实单必成
询价
更多IPD65R380E6供应商 更新时间2024-5-3 13:00:00