首页 >IPI045N10N3G>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IPI045N10N3G | OptiMOS?? Power-Transistor Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | |
IPI045N10N3G | OptiMOS?? Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | |
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
OptiMOSTM3Power-Transistor VDS100V RDS(on),max4.5mW ID64A Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Ideal | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOSTM3Power-Transistor,100V Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
MaterialContentDataSheet | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-channelenhancementmode | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS??Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
100VN-ChannelMOSFET Features •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •Idealforhigh-frequencyswitchingandsynchronousrectification •VDS •ID=137A •RDS(ON)(atVGS=10V) | UMWUMW 友台友台半导体 | UMW | ||
OptiMOS??Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS??Power-Transistor Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS??Power-Transistor Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS??Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon |
详细参数
- 型号：
IPI045N10N3G
- 制造商：
Infineon Technologies AG
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
23+ |
标准封装 |
7933 |
原厂渠道供应,大量现货,原型号开票。 |
询价 | ||
INFINEON/英飞凌 |
2021+ |
TO-262 |
17207 |
原装进口假一罚十 |
询价 | ||
INFINEON/英飞凌 |
2024+实力库存 |
TO-262 |
250 |
只做原厂渠道 可追溯货源 |
询价 | ||
INFINEON/英飞凌 |
21+23+ |
TO-262 |
3500 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
INFINE0N |
23+ |
TO-262-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
23+ |
N/A |
85900 |
正品授权货源可靠 |
询价 | |||
LT |
2019 |
SOP8 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
英飞凌 |
21+ |
PG-TO262-3 |
6000 |
绝对原裝现货 |
询价 | ||
Infineon |
1931+ |
N/A |
493 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
INFINEON/英飞凌 |
TO-262 |
198589 |
假一罚十原包原标签常备现货! |
询价 |
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