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IPB26CN10NG

OptiMOS짰2 Power-Transistor

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB26CN10NG

OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB26CN10NG

N-channel, normal level

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB26CN10NG_13

N-channel, normal level

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IIPP26CN10N

iscN-ChannelMOSFETTransistor

•DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤26mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPB26CN10N

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPB26CN10N

OptiMOSPower-TransistorFeatureEnhancementmodeLogicLevelAvalancherated

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPI26CN10N

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPI26CN10NG

N-channel,normallevel

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPI26CN10NG

OptiMOSPower-TransistorFeatureEnhancementmodeLogicLevelAvalancherated

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPI26CN10NG

OptiMOS짰2Power-Transistor

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPP26CN10N

OptiMOS짰2Power-Transistor

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPP26CN10N

iscN-ChannelMOSFETTransistor

•DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤26mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPP26CN10NG

OptiMOSPower-TransistorFeatureEnhancementmodeLogicLevelAvalancherated

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPP26CN10NG

OptiMOS짰2Power-Transistor

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPP26CN10NG

N-channel,normallevel

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

详细参数

  • 型号:

    IPB26CN10NG

  • 制造商:

    INFINEON

  • 制造商全称:

    Infineon Technologies AG

  • 功能描述:

    OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated

供应商型号品牌批号封装库存备注价格
INFINEON
TO-263
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
询价
IR
23+
PG-TO263-3
12300
全新原装真实库存含13点增值税票!
询价
INFINEON
21+
SOT263
60000
原装正品进口现货
询价
英飞翎
17+
D2PAK(TO-263)
31518
原装正品 可含税交易
询价
INFINEON/英飞凌
21+23+
TO-263
5000
16年电子元件现货供应商 终端BOM表可配单提供样品
询价
INFINEON
2012+
TO-263
12000
全新原装,绝对正品,公司现货供应。
询价
INFINEON
08+(pbfree)
D2PAK(TO-263)
8866
询价
INFINEON
2017+
TO263
32568
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
INFINEON
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
INFINE0N
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
询价
更多IPB26CN10NG供应商 更新时间2024-4-28 14:00:00