IPB011N04LG

OptiMOS3 Power Transistor

Features •MOSFETforORingandUninterruptiblePowerSupply •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel •Logiclevel •Ultra-lowon-resistanceRDS(on) •100Avalanchetested •pb-freeplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IPB011N04L

OptiMOS3PowerTransistor

Features •MOSFETforORingandUninterruptiblePowerSupply •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel •Logiclevel •Ultra-lowon-resistanceRDS(on) •100Avalanchetested •pb-freeplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IPB011N04NG

OptiMOS3Power-Transistor

Features •MOSFETforORingandUniterruptiblePowerSupply •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel •Normallevel •Ultra-lowon-resistanceRDS(on) •Avalancherated •Pb-freeplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

NTMYS011N04C

PowerMOSFET40V,12m,35A,SingleN?묬hannel

NTMYS011N04CTWG

PowerMOSFET40V,12m,35A,SingleN?묬hannel

NVLJWS011N04CL

MOSFET??Power,SingleN-Channel40V,11m,37A

Features •SmallFootprintforCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMYS011N04C

MOSFET–Power,SingleN-Channel40V,12m,35A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK4Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMYS011N04CTWG

MOSFET–Power,SingleN-Channel40V,12m,35A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK4Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant