首页 >IPB011N04L>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
IPB011N04L | OptiMOS3 Power Transistor Features •MOSFETforORingandUninterruptiblePowerSupply •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel •Logiclevel •Ultra-lowon-resistanceRDS(on) •100Avalanchetested •pb-freeplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | |
OptiMOS3 Power Transistor Features •MOSFETforORingandUninterruptiblePowerSupply •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel •Logiclevel •Ultra-lowon-resistanceRDS(on) •100Avalanchetested •pb-freeplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS3Power-Transistor Features •MOSFETforORingandUniterruptiblePowerSupply •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel •Normallevel •Ultra-lowon-resistanceRDS(on) •Avalancherated •Pb-freeplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
PowerMOSFET40V,12m,35A,SingleN?묬hannel | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PowerMOSFET40V,12m,35A,SingleN?묬hannel | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MOSFET??Power,SingleN-Channel40V,11m,37A Features •SmallFootprintforCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MOSFET–Power,SingleN-Channel40V,12m,35A Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK4Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MOSFET–Power,SingleN-Channel40V,12m,35A Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK4Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
详细参数
- 型号:
IPB011N04L
- 功能描述:
MOSFET OptiMOS 3 PWR TRANS 40V 180A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Infineon |
23+ |
TO263-7 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
INFINONE |
21+ |
SOT-263 |
60000 |
原装正品进口现货 |
询价 | ||
INFINON |
2020+ |
SOT-263 |
9500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
INFINEON/英飞凌 |
21+ |
TO-263 |
30000 |
只做正品原装现货 |
询价 | ||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
INFINEON/英飞凌 |
23+ |
TO263-7 |
10000 |
公司只做原装正品 |
询价 | ||
Infineon(英飞凌) |
23+ |
N/A |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
询价 | ||
INF |
21+ |
TO-263-7 |
10000 |
原装现货假一罚十 |
询价 | ||
Infineon |
22+ |
TO263-7 |
6000 |
十年配单,只做原装 |
询价 | ||
INF |
TO-263-7 |
68900 |
原包原标签100%进口原装常备现货! |
询价 |
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