| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IGB30N60T | Low Loss IGBT in TrenchStop and Fieldstop technology | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | |
IGB30N60T | Low Loss IGBT in TrenchStop technology | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | |
IGB30N60T | Low Loss IGBT : IGBT in TRENCHSTOP??and Fieldstop technology | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | |
Low Loss IGBT in TrenchStop technology | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
Low Loss IGBT : IGBT in TRENCHSTOP??and Fieldstop technology | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryantiparallelEmitterControlleddiode | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
ACTIVE/SYNCHRONOUSRECTIFIER | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
BIDW30N60TInsulatedGateBipolarTransistor(IGBT) GeneralInformation TheBourns®ModelBIDW30N60TIGBTdevicecombinestechnologyfromaMOSgate andabipolartransistorforanoptimumcomponentforhighvoltageandhighcurrent applications.ThisdeviceusesTrench-GateField-Stoptechnologyprovidinggreater controlofdynamiccharacteris | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
N-ChannelEnhancementModeMOSFET | DACO DACO | DACO | ||
N-ChannelEnhancementModeMOSFET | DACO DACO | DACO | ||
N-ChannelEnhancementModeMOSFET | DACO DACO | DACO | ||
MOSFETsandbipolartransistors | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
MOSFETsandbipolartransistors | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
Lowsaturationvoltage:VCE(sat)=1.1V@IC=30A | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
Lowsaturationvoltage:VCE(sat)=1.1V@IC=30A | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
DiscreteIGBT(High-SpeedVseries)600V/30A | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | Fuji | ||
600V,SMPSSeriesN-ChannelIGBT TheHGTG30N60A4combinesthebestfeaturesofhighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.ThisIGBTisidealformanyhighvoltageswitchingapplicationsoperatingathighfrequencieswherelowconductionlossesareessential.Thisdevicehasbeen | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
60A,600V,UFSSeriesN-ChannelIGBT TheHGTG30N60B3isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
63A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes TheHGTG30N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
63A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes TheHGTG30N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
详细参数
- 型号：
IGB30N60T
- 功能描述：
IGBT 晶体管 LOW LOSS IGBT TECH 600V 30A
- RoHS：
否
- 制造商：
Fairchild Semiconductor
- 配置：
集电极—发射极最大电压
- VCEO：
650 V
- 集电极—射极饱和电压：
2.3 V
- 栅极/发射极最大电压：
20 V 在25
- C的连续集电极电流：
150 A
- 栅极—射极漏泄电流：
400 nA
- 功率耗散：
187 W
- 封装/箱体：
TO-247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
23+ |
TO-263 |
1612 |
原厂订货渠道,支持BOM配单一站式服务 |
询价 | ||
INFINEON |
21+ |
TO263 |
20000 |
原厂订货价格优势,可开13%的增值税票 |
询价 | ||
INFINEON |
22+ |
P-TO-263-3- |
9250 |
绝对原装现货,价格低,欢迎询购! |
询价 | ||
英飞凌 |
新批次 |
N/A |
1500 |
询价 | |||
INFINEON |
08+(pbfree) |
P-TO-263-3-2 |
8866 |
询价 | |||
INFINEON |
23+ |
TO-263 |
6500 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
询价 | ||
INFINEON |
23+ |
P-TO-263-3-2 |
8600 |
全新原装现货 |
询价 | ||
infineon |
dc14 |
原厂封装 |
240 |
INSTOCK:1000/tr/dpak |
询价 | ||
INFINEON |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
Infineon(英飞凌) |
2112+ |
PG-TO263-3 |
115000 |
1000个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 |
相关规格书
更多- IGB30N60T_09
- IGB439381
- IGB50N60T
- IGB50N60TATMA1
- IGB6B
- IGC0258
- IGC10000
- IGC10756
- IGC109T120T6RL
- IGC11500
- IGC12001
- IGC142T120T6RH
- IGC142T120T6RM
- IGC20
- IGC20120
- IGC20450
- IGC27T120T6L
- IGC50T120T6RL
- IGC70T120T6RM
- IGC99T120T6RL
- IGCM04F60GA
- IGCM06B60HA
- IGCM06F60HA
- IGCM10F60HA
- IGCM15F60HA
- IGCM20F60HA
- IGD01N120H2BUMA1
- IGD06N60T
- IGD06N60TBUMA1
- IGD-1-424-P1N4-DL-FA
- IGD2351/HV5
- IGD2651
- IGD4251
- IGD615AI-17E
- IGD-8-326-E1F12-BH-FA
- IGD-8-426-E1F12-BH-FA
- IGE250-63
- IGE251-73
- IGE251-73-XVA1
- IGE251-NBL3
- IGE254-78
- IGF-17311J
- IGF-17511J
- IGF-32511J
- IGF-42312J
相关库存
更多- IGB30N60TATMA1
- IGB4B
- IGB50N60T_09
- IGB639382
- IGBT-4
- IGC07T120T6L
- IGC10408
- IGC109T120T6RH
- IGC109T120T6RM
- IGC11T120T6L
- IGC13T120T6L
- IGC142T120T6RL
- IGC18T120T6L
- IGC20030
- IGC20190
- IGC206
- IGC36T120T6L
- IGC70T120T6RL
- IGC99T120T6RH
- IGC99T120T6RM
- IGCM06B60GA
- IGCM06F60GA
- IGCM10F60GA
- IGCM15F60GA
- IGCM20F60GA
- IGD01N120H2
- IGD0551
- IGD06N60TATMA1
- IGD1205W
- IGD2151
- IGD2391
- IGD2651/HV5
- IGD4251/HV12
- IGD7351
- IGD841
- IGD962
- IGE250-73
- IGE251-73-XLI1
- IGE251-78
- IGE254-73
- IGE25A-73
- IGF-17511J
- IGF-32511J
- IGF-42311J
- IGFA004A
