首页 >IDT70T633S10DDI>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
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IDT70T633S10DDI | HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Description TheIDT70T633/1isahigh-speed512/256Kx18AsynchronousDual-PortStaticRAM.TheIDT70T633/1isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor36-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | |
HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
ASYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
ASYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ASYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
ASYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Description TheIDT70T633/1isahigh-speed512/256Kx18AsynchronousDual-PortStaticRAM.TheIDT70T633/1isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor36-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Description TheIDT70T633/1isahigh-speed512/256Kx18AsynchronousDual-PortStaticRAM.TheIDT70T633/1isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor36-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Description TheIDT70T633/1isahigh-speed512/256Kx18AsynchronousDual-PortStaticRAM.TheIDT70T633/1isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor36-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Description TheIDT70T633/1isahigh-speed512/256Kx18AsynchronousDual-PortStaticRAM.TheIDT70T633/1isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor36-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IDT |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IDT |
23+ |
256-CABGA(17x17) |
9550 |
专业分销产品!原装正品!价格优势! |
询价 | ||
IDT |
22+ |
256CABGA |
9000 |
原厂渠道,现货配单 |
询价 | ||
IDT |
21+ |
256CABGA |
13880 |
公司只售原装,支持实单 |
询价 | ||
IDT |
23+ |
256CABGA |
9000 |
原装正品,支持实单 |
询价 | ||
IDT |
23+ |
BGA256 |
90000 |
一定原装正品 |
询价 | ||
IDT |
2102+ |
BGA256 |
6854 |
只做原厂原装正品假一赔十! |
询价 | ||
IDT |
0918+ |
BGA256 |
29 |
普通 |
询价 | ||
IDT |
23+ |
BGA |
30000 |
房间原装现货特价热卖,有单详谈 |
询价 | ||
IDT |
22+ |
BGA |
6000 |
进口原装 假一罚十 现货 |
询价 |
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