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IDT6116LA25Y

CMOS STATIC RAM 16K (2K x 8 BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT6116LA25YI

CMOS STATIC RAM 16K (2K x 8 BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT6116LA35P

CMOS STATIC RAM 16K (2K x 8 BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT6116LA35PI

CMOS STATIC RAM 16K (2K x 8 BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT6116LA35SO

CMOS STATIC RAM 16K (2K x 8 BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT6116LA35SOI

CMOS STATIC RAM 16K (2K x 8 BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT6116LA35TDB

CMOS STATIC RAM 16K (2K x 8 BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT6116LA35TP

CMOS STATIC RAM 16K (2K x 8 BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT6116LA35TPI

CMOS STATIC RAM 16K (2K x 8 BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT6116LA35Y

CMOS STATIC RAM 16K (2K x 8 BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT6116LA35YI

CMOS STATIC RAM 16K (2K x 8 BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT6116LA45DB

CMOS STATIC RAM 16K (2K x 8 BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT6116LA45P

CMOS STATIC RAM 16K (2K x 8 BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT6116LA45PI

CMOS STATIC RAM 16K (2K x 8 BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT6116LA45SO

CMOS STATIC RAM 16K (2K x 8 BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT6116LA45SOI

CMOS STATIC RAM 16K (2K x 8 BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT6116LA45TDB

CMOS STATIC RAM 16K (2K x 8 BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT6116LA45TP

CMOS STATIC RAM 16K (2K x 8 BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT6116LA45TPI

CMOS STATIC RAM 16K (2K x 8 BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT6116LA45Y

CMOS STATIC RAM 16K (2K x 8 BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

详细参数

  • 型号:

    IDT6116

  • 制造商:

    Integrated Device Technology Inc

  • 功能描述:

    IC SRAM 16KBIT 120NS 24CERDIP

供应商型号品牌批号封装库存备注价格
IDT
专业军工
DIP
860
只做原装正品现货授权货源
询价
IDT
2023+
DIP
3500
全新原厂原装产品、公司现货销售
询价
IDT
18+
DIP
60
原装正品 专营军工
询价
IDT
23+
CDIP
5000
原装正品,假一罚十
询价
IDT
2020+
DIP-24
23
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
IDT
23+
24600MILCERD
9526
询价
idt
dc0607
原厂封装
1
INSTOCK:15/tube/dip24
询价
IDT
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
idt
19+
cdip
2539
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
IDT
DIP
550
价格优势!军工IC一级分销商!可开增值税发票!
询价
更多IDT6116供应商 更新时间2024-6-7 13:52:00