首页>HUF76129S3S>规格书详情
HUF76129S3S中文资料PDF规格书
HUF76129S3S规格书详情
These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
Features
• Logic Level Gate Drive
• 56A, 30V
• Ultra Low On-Resistance, rDS(ON) = 0.016Ω
• Temperature Compensating PSPICE® Model
• Temperature Compensating SABER© Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
产品属性
- 型号:
HUF76129S3S
- 功能描述:
MOSFET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON |
20+/21+ |
SOT-263 |
4240 |
全新原装进口价格优势 |
询价 | ||
isc |
2024 |
D2PAK/TO-263 |
3200 |
国产品牌isc,可替代原装 |
询价 | ||
INFINEON |
2016+ |
TO-263 |
1800 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
23+ |
N/A |
85900 |
正品授权货源可靠 |
询价 | |||
FAIRCHILD |
23+ |
TO-263 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
FAI |
23+ |
65480 |
询价 | ||||
FAIRCHILD/仙童 |
21+ROHS |
TO-263 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
FAIRCHILD |
23+ |
TO-263 |
9526 |
询价 | |||
FAIRCHILD/仙童 |
2022+ |
TO-263 |
8 |
全新原装现货 |
询价 | ||
FAIRCHILD/仙童 |
23+ |
DIP-6 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 |