首页>HUF76121D3S>规格书详情
HUF76121D3S中文资料PDF规格书
HUF76121D3S规格书详情
These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
Features
• Logic Level Gate Drive
• 20A, 30V
• Ultra Low On-Resistance, rDS(ON) = 0.023Ω
• Temperature Compensating PSPICE® Model
• Temperature Compensating SABER© Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
产品属性
- 型号:
HUF76121D3S
- 功能描述:
MOSFET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
TO252 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
FAIRCHILD |
1822+ |
TO-252 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
FAIRCHILD |
23+ |
TO-252 |
9526 |
询价 | |||
INTERSIL |
21+ |
35200 |
一级代理/放心采购 |
询价 | |||
FAIRCHILD/仙童 |
2022 |
TO-252 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
INTERSIL |
2023+ |
SMD |
5668 |
安罗世纪电子只做原装正品货 |
询价 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
INTERSIL |
2024+实力库存 |
TO-252 |
12500 |
只做原厂渠道 可追溯货源 |
询价 | ||
FAIRCHILD/仙童 |
23+ |
SOT252 |
6000 |
原装正品,支持实单 |
询价 | ||
HARRIS |
2008++ |
TO-252 |
59200 |
新进库存/原装 |
询价 |