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HMG20N60A

20A, 600V insulated gate bipolar transistor

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

20N60

20A,600VN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC20N60isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

20N60

FastSwitching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

20N60

N-Channel650-V(D-S)SuperJunctionMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

20N60A

20A600VN-channelenhancedfieldeffecttransistor

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

20N60B

HiPerFASTIGBT

VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features •InternationalstandardpackagesJEDECTO-268surfacemountableandJEDECTO-247AD •Highcurrenthandlingcapability •LatestgenerationHDMOSTMprocess •MOSGateturn-on -drivesimplicity

IXYS

IXYS Integrated Circuits Division

20N60CFD

HITACHIEncapsulation,DIP16

HitachiHitachi, Ltd.

日立公司

20N60CFD

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

20N60CFD

CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnologyExtremedv/dtrated

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

20N60CFD

CoolMOSPowerTransistor

Features •Newrevolutionaryhighvoltagetechnology •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Periodicavalancherated •Qualifiedforindustrialgradeapplicationsaccording

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

AFGB20N60SFD

Usingnovelfield−stopIGBTtechnology

Features •HighCurrentCapability •LowSaturationVoltage:VCE(sat)=2.2V@IC=20A •HighInputImpedance •FastSwitching •AEC−Q101QualifiedtoAutomotiveRequirements •TheseDevicesarePb−FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

AFGB20N60SFD-BW

Usingnovelfield−stopIGBTtechnology

Features •HighCurrentCapability •LowSaturationVoltage:VCE(sat)=2.2V@IC=20A •HighInputImpedance •FastSwitching •AEC−Q101QualifiedtoAutomotiveRequirements •TheseDevicesarePb−FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

AIKB20N60CT

LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryanti-paralleldiode

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

AIKP20N60CT

LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlleddiode

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

AIKW20N60CT

LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryantiparallelEmitterControlleddiode

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

AOK20N60

600V,20AN-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOK20N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.37Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOK20N60L

600V,20AN-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOK20N60L

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOT20N60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

供应商型号品牌批号封装库存备注价格
虹美功率半导体
21+
TO-220
50
只做原装
询价
BUSSMANN
TSOP
320
正品原装--自家现货-实单可谈
询价
BUSSMANN
1922+
TSOP
2000
自己库存原装正品特价出售
询价
BUSSMANN
TSOP
3350
一级代理 原装正品假一罚十价格优势长期供货
询价
BUSSMANN
23+
TSOP
1800
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
询价
23+
DIP-40
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
HMC/TAILYN
2402+
DIP-40
8324
原装正品!实单价优!
询价
TOWA
22+
1000000
专营插件.贴片 电解电容 全新原装现货
询价
TOWA
23+
NA
880000
明嘉莱只做原装正品现货
询价
HP
22+
SSOP-6
3694
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
更多HMG20N60A供应商 更新时间2024-6-14 15:00:00