HM60N20规格书应用电路批发供应HMSEMI-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
HM60N20	文件：568.16 Kbytes Page：7 Pages	N-Channel Enhancement Mode Power MOSFET	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司	HMSEMI
HM60N20D	文件：747.21 Kbytes Page：7 Pages	N-Channel Enhancement Mode Power MOSFET	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司	HMSEMI
60N20	文件：94.02 Kbytes Page：2 Pages	HiPerFETPowerMOSFETs HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt Features •Internationalstandardpackages •LowRDS(on) •RatedforunclampedInductiveloadswitching(UIS) •MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages •Easytomount •Spacesav	IXYS IXYS Integrated Circuits Division	IXYS
FIR60N20ANG	文件：3.77338 Mbytes Page：7 Pages	N-ChannelEnhancementModePowerMosfet	FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司	FOSTER
FIR60N20PG	文件：4.82027 Mbytes Page：7 Pages	N-ChannelEnhancementModePowerMosfet	FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司	FOSTER
IXFC60N20	文件：322.73 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=60A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=33mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFC60N20	文件：77.12 Kbytes Page：2 Pages	HiPerFETMOSFETISOPLUS220TM HiPerFET™MOSFETISOPLUS220™ ElectricallyIsolatedBackSurface N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOS™Family Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation •Lowdraintot	IXYS IXYS Integrated Circuits Division	IXYS
IXFH60N20	文件：94.02 Kbytes Page：2 Pages	HiPerFETPowerMOSFETs HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt Features •Internationalstandardpackages •LowRDS(on) •RatedforunclampedInductiveloadswitching(UIS) •MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages •Easytomount •Spacesav	IXYS IXYS Integrated Circuits Division	IXYS
IXFH60N20	文件：371.66 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=60A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=33mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH60N20F	文件：372.58 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=60A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=38mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH60N20F	文件：104.28 Kbytes Page：2 Pages	HiPerRFTMPowerMOSFETs HiPerRFTMPowerMOSFETs F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRgHighdV/dt,Lowtrr Features •RFcapableMOSFETs •Doublemetalprocessforlowgateresistance •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-	IXYS IXYS Integrated Circuits Division	IXYS
IXFT60N20	文件：94.02 Kbytes Page：2 Pages	HiPerFETPowerMOSFETs HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt Features •Internationalstandardpackages •LowRDS(on) •RatedforunclampedInductiveloadswitching(UIS) •MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages •Easytomount •Spacesav	IXYS IXYS Integrated Circuits Division	IXYS
IXFT60N20F	文件：103.11 Kbytes Page：2 Pages	HiPerRFPowerMOSFETF-Class:MegaHertzSwitching	IXYS IXYS Integrated Circuits Division	IXYS
IXTA60N20T	文件：299.53 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXTA60N20T	文件：140.84 Kbytes Page：4 Pages	N-ChannelEnhancementModeForPDPDriversAvalancheRated N-ChannelEnhancementModeForPDPDrivers AvalancheRated Features HighCurrentHandlingCapability 175°COperatingTemperature AvalancheRated FastIntrinsicRectifier LowRDS(on) Applications DC-DCConverters BatteryChargers Switch-ModeandResonant-Mode	IXYS IXYS Integrated Circuits Division	IXYS
IXTP60N20T	文件：140.84 Kbytes Page：4 Pages	N-ChannelEnhancementModeForPDPDriversAvalancheRated N-ChannelEnhancementModeForPDPDrivers AvalancheRated Features HighCurrentHandlingCapability 175°COperatingTemperature AvalancheRated FastIntrinsicRectifier LowRDS(on) Applications DC-DCConverters BatteryChargers Switch-ModeandResonant-Mode	IXYS IXYS Integrated Circuits Division	IXYS
IXTP60N20T	文件：295.38 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXTQ60N20T	文件：301.13 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXTQ60N20T	文件：140.84 Kbytes Page：4 Pages	N-ChannelEnhancementModeForPDPDriversAvalancheRated N-ChannelEnhancementModeForPDPDrivers AvalancheRated Features HighCurrentHandlingCapability 175°COperatingTemperature AvalancheRated FastIntrinsicRectifier LowRDS(on) Applications DC-DCConverters BatteryChargers Switch-ModeandResonant-Mode	IXYS IXYS Integrated Circuits Division	IXYS

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳兆威电子有限公司	HM60N75K	VB	2019	TO-252	55000	绝对原装正品假一罚十!	询价
深圳市汇莱威科技有限公司	HM60N75K	HMSEMI		TO-252	500233	16余年资质绝对原盒原盘更多数量	询价
深圳市瑞智芯科技有限公司	HM60N75K	虹美功率半导体	21+	TO-252	30	只做原装	询价
深圳市惊羽科技有限公司	HM60N75K	HMSEMI	24+25+/26+27+	TO-252-3	78800	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
深圳市九方航科技有限公司	HM60N75K	VBSEMI	19+	TO-252	29600	绝对原装现货,价格优势!	询价
深圳市星佑电子有限公司	HM60TKSL330J	MMCELECTRONI	06+	原厂原装	28270	只做全新原装真实现货供应	询价
深圳市永贝尔科技有限公司	HM61	BITECH	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
贸泽芯城（深圳）电子科技有限公司	HM6103	HZM	21+ROHS	SOT23-5L	33265	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市宇集芯电子有限公司	HM6107	HITACHI	24+	DIP	90000	一级代理商进口原装现货、价格合理	询价
深圳庞田科技有限公司	HM611024-15JA	HMI	2023+环保现货	SOP	5	专注军工、汽车、医疗、工业等方案配套一站式服务	询价

更多HM60N20供应商更新时间2024-6-13 8:56:00

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