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HGTP3N60C3D中文资料PDF规格书
HGTP3N60C3D规格书详情
Description
The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The IGBT used is the development type TA49113. The diode used in anti-parallel with the IGBT is the development type TA49055.
Features
• 6A, 600V at TC = +25°C
• 600V Switching SOA Capability
• Typical Fall Time - 130ns at TJ = +150°C
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
产品属性
- 型号：
HGTP3N60C3D
- 功能描述：
IGBT 晶体管
- RoHS：
否
- 制造商：
Fairchild Semiconductor
- 配置：
集电极—发射极最大电压
- VCEO：
650 V
- 集电极—射极饱和电压：
2.3 V
- 栅极/发射极最大电压：
20 V 在25
- C的连续集电极电流：
150 A
- 栅极—射极漏泄电流：
400 nA
- 功率耗散：
187 W
- 封装/箱体：
TO-247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
仙童/INTERSI |
2023+ |
TO-220 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
FAIRCHILD/仙童 |
23+ |
TO-220 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
HARRIS/哈里斯 |
21+ROHS |
59680 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
23+ |
N/A |
49000 |
正品授权货源可靠 |
询价 | |||
INTERSIL |
23+ |
TO-TO-220 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
2020+ |
6500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||||
FAIRCHI |
21+ |
TO-220 |
12588 |
原装正品,自己库存 假一罚十 |
询价 | ||
仙童/INTERSI |
23+ |
TO-220 |
5000 |
专注配单,只做原装进口现货 |
询价 | ||
INTERSIL |
23+ |
TO-220 |
6000 |
原装正品，支持实单 |
询价 | ||
Intersil |
08+(pbfree) |
TO-220 |
8866 |
询价 |
