The HGTP3N60B3D and HGT1S3N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRD460. The IGBT used is TA49192.

Features

• 7A, 600V TC = 25°C

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 115ns at TJ = 125°C

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

• Related Literature

• TB334 “Guidelines for Soldering Surface Mount

    - Components to PC Boards