首页 >HGTG30N60A4D>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
HGTG30N60A4D | 600V, SMPS Series N-Channel IGBT with TheHGTG30N60A4DisaMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderat | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
HGTG30N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG30N60A4DisaMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolar | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | |
HGTG30N60A4D | N-Channel IGBT DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.6V@IC=30A ·HighCurrentCapability ·HighInputImpedance ·LowConductionLoss APPLICATIONS ·SynchronousRectificationinSMPS ·MotorDrives ·UPS,PFC ·Generalpurposeinverter | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
HGTG30N60A4D | 包装:管件 封装/外壳:TO-247-3 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 600V 75A 463W TO247 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
600V,SMPSSeriesN-ChannelIGBT TheHGTG30N60A4isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
600V,SMPSSeriesN-ChannelIGBT TheHGTG30N60A4combinesthebestfeaturesofhighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.ThisIGBTisidealformanyhighvoltageswitchingapplicationsoperatingathighfrequencieswherelowconductionlossesareessential.Thisdevicehasbeen | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,SMPSSeriesN-ChannelIGBTwith TheHGTG30N60A4DisaMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderat | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,SMPSSeriesN-ChannelIGBT TheHGTG30N60A4combinesthebestfeaturesofhighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.ThisIGBTisidealformanyhighvoltageswitchingapplicationsoperatingathighfrequencieswherelowconductionlossesareessential.Thisdevicehasbeen | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,SMPSSeriesN-ChannelIGBT TheHGTG30N60A4isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil |
产品属性
- 产品编号:
HGTG30N60A4D
- 制造商:
onsemi
- 类别:
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
- 包装:
管件
- 不同 Vge、Ic 时 Vce(on)(最大值):
2.6V @ 15V,30A
- 开关能量:
280µJ(开),240µJ(关)
- 输入类型:
标准
- 25°C 时 Td(开/关)值:
25ns/150ns
- 测试条件:
390V,30A,3 欧姆,15V
- 工作温度:
-55°C ~ 150°C(TJ)
- 安装类型:
通孔
- 封装/外壳:
TO-247-3
- 供应商器件封装:
TO-247-3
- 描述:
IGBT 600V 75A 463W TO247
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
onsemi/安森美 |
新批次 |
TO-247 |
4500 |
询价 | |||
onsemi(安森美) |
23+ |
TO-247 |
928 |
原厂订货渠道,支持BOM配单一站式服务 |
询价 | ||
ON |
23+ |
TO-247 |
8000 |
原装正品,假一罚十 |
询价 | ||
FAIRCHILD/仙童 |
2021+ |
TO-247-3 |
3580 |
原装现货/15年行业经验欢迎询价 |
询价 | ||
ONSENI |
2019 |
NA |
1350 |
全新原装!优势库存热卖中! |
询价 | ||
FAIRCHILD |
21+ |
TO-247 |
4500 |
专营原装正品现货,当天发货,可开发票! |
询价 | ||
FAIRCHILDONSEMICONDUCTOR |
21+ |
NA |
28 |
只做原装,假一罚十 |
询价 | ||
ONSEMI |
21+ |
18 |
9850 |
只做原装正品假一赔十!正规渠道订货! |
询价 | ||
ADI/亚德诺 |
2206+ |
SOP16 |
11785 |
专营原装正品,现货特价中!QQ:1978835518/192523 |
询价 | ||
FSC |
23+ |
TO-247 |
6800 |
一级分销商 |
询价 |
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