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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
FQB8N60C	文件：294.02 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=7.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQB8N60C	文件：644.54 Kbytes Page：9 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB8N60C	文件：804.09 Kbytes Page：9 Pages	N-ChannelQFET짰MOSFET600V,7.5A,1.2廓 GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB8N60CF	文件：708.03 Kbytes Page：8 Pages	600VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB8N60CFTM	文件：708.03 Kbytes Page：8 Pages	600VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB8N60CTM	文件：804.09 Kbytes Page：9 Pages	N-ChannelQFET짰MOSFET600V,7.5A,1.2廓 GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQI8N60C	文件：804.09 Kbytes Page：9 Pages	N-ChannelQFET짰MOSFET600V,7.5A,1.2廓 GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQI8N60C	文件：644.54 Kbytes Page：9 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP8N60C	文件：927.42 Kbytes Page：10 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP8N60C	文件：1.12264 Mbytes Page：9 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductorÿsproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
FQP8N60C	文件：1.30367 Mbytes Page：10 Pages	600VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP8N60C	文件：296.65 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=7.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQPF8N60	文件：162.17 Kbytes Page：2 Pages	N-ChannelMosfetTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQPF8N60C	文件：1.30367 Mbytes Page：10 Pages	600VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQPF8N60C	文件：1.12264 Mbytes Page：9 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductorÿsproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
FQPF8N60C	文件：829.76 Kbytes Page：8 Pages	N-ChannelQFET짰MOSFET600V,7.5A,1.2廓	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQPF8N60C	文件：927.42 Kbytes Page：10 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQPF8N60C	文件：278.58 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=7.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQPF8N60CF	文件：278.47 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=6.26A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQPF8N60CF	文件：755.01 Kbytes Page：8 Pages	600VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市瑞新盛科技有限公司	HFS8N60U	SemiHow	2019+	TO-220FTO251	67250	只做原装正品假一赔十优势供应	询价
深圳兆威电子有限公司	HFS8N60U	VB	2019	TO-220FP	55000	绝对原装正品假一罚十!	询价
深圳市新力诚科技有限公司	HFS8N60U	Semihow	2020+	TO-220F	45800	公司代理品牌,原装现货超低价清仓!	询价
深圳市国宇半导体科技有限公司	HFS8N60U	S	23+	TO-220F	10000	公司只做原装正品	询价
深圳市河锋鑫科技有限公司	HFS8N60U	SEMIHOW	2022+	TO-220F	32500	原厂代理终端免费提供样品	询价
深圳市吉利鑫科技发展有限公司	HFS8N60U	SEMIHOW	2022+	TO-220F	79999		询价
深圳市华集芯实业有限公司	HFS8N60U	SEMIHOW	23+	TO-251	6000	公司十几年如一日,只做原装正品,优势渠道保证每一片	询价
深圳市创新迹电子有限公司	HFS8N60U	SEMIHOW	23+	TO-220F	6800	专注配单,只做原装进口现货	询价
深圳市惊羽科技有限公司	HFS8N60U	SEMIHOW	24+25+/26+27+	TO-220-3	78800	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
深圳市九方航科技有限公司	HFS8N60U	VBSEMI	19+	TO-220FP	29600	绝对原装现货,价格优势!	询价

更多HFS8N60U供应商更新时间2024-6-9 9:35:00

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