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FQB8N60CFTM

600V N-Channel MOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB8N60CTM

N-ChannelQFET짰MOSFET600V,7.5A,1.2廓

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQI8N60C

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQI8N60C

N-ChannelQFET짰MOSFET600V,7.5A,1.2廓

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP8N60C

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP8N60C

600VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP8N60C

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductorÿsproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,

KERSEMI

Kersemi Electronic Co., Ltd.

FQP8N60C

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQPF8N60

N-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQPF8N60C

N-ChannelQFET짰MOSFET600V,7.5A,1.2廓

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF8N60C

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductorÿsproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,

KERSEMI

Kersemi Electronic Co., Ltd.

FQPF8N60C

600VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF8N60C

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF8N60C

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQPF8N60CF

600VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF8N60CF

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6.26A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQPF8N60CFT

600VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF8N60CT

N-ChannelQFET짰MOSFET600V,7.5A,1.2廓

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HFD8N60U

SuperiorAvalancheRuggedTechnology

SEMIHOW

SemiHow Co.,Ltd.

HFI8N60U

600VN-ChannelMOSFET

SEMIHOW

SemiHow Co.,Ltd.

详细参数

  • 型号:

    FQB8N60CFTM

  • 功能描述:

    MOSFET N-CH/250V/ 8A/0.55OHM

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
onsemi(安森美)
23+
TO-263
8357
支持大陆交货,美金交易。原装现货库存。
询价
FSC
24+
TO-263
5000
只做原装公司现货
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
harris
16+
原厂封装
10000
全新原装正品,代理优势渠道供应,欢迎来电咨询
询价
FSC
22+23+
TO-263
28271
绝对原装正品全新进口深圳现货
询价
FAIRCHIL
24+
TO-263
90000
一级代理商进口原装现货、价格合理
询价
FSC/ON
23+
原包装原封 □□
8364
原装进口特价供应 QQ 1304306553 更多详细咨询 库存
询价
FAIRCHILD/仙童
23+
TO-263
30000
全新原装现货,价格优势
询价
FAIRCHILD/仙童
18+PBF
TO-263-2
3775
就找我吧!--邀您体验愉快问购元件!
询价
F
23+
D2-PAK
10000
公司只做原装正品
询价
更多FQB8N60CFTM供应商 更新时间2024-10-31 16:13:00