| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelPowerMOSFET1.8,600Volts | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-ChannelPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-ChannelPowerMOSFET1.8,600Volts | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-ChannelPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-ChannelPowerMOSFET600V,2.0Ohm | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-ChannelPowerMOSFET600V,2.0Ohm | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-ChannelPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-ChannelPowerMOSFET1.8,600Volts | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4.4A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelPowerMOSFET1.8,600Volts | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Triac | KODENSHIKodenshi Group 可天士可天士光电子集团 | KODENSHI | ||
Triac | KODENSHIKodenshi Group 可天士可天士光电子集团 | KODENSHI | ||
Triac | KODENSHIKodenshi Group 可天士可天士光电子集团 | KODENSHI | ||
Triac | KODENSHIKodenshi Group 可天士可天士光电子集团 | KODENSHI | ||
SuperhighdensecelldesignforlowRDS(ON) | Samhop 三合微科 | Samhop | ||
PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
SuperhighdensecelldesignforlowRDS(ON). | Samhop 三合微科 | Samhop | ||
FastIGBTinNPT-technology75lowerEoffcomparedtopreviousgeneration | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
FastIGBTinNPT-technology FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon |
详细参数
- 型号：
H04N60E
- 制造商：
HSMC
- 制造商全称：
HSMC
- 功能描述：
N-Channel Power Field Effect Transistor
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VB |
2019 |
TO-220 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
H |
23+ |
TO-TO-220 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
H |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
询价 | ||
H |
22+ |
TO-220 |
6000 |
十年配单,只做原装 |
询价 | ||
H |
23+ |
TO-220 |
6000 |
原装正品，支持实单 |
询价 | ||
H |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
VBSEMI |
19+ |
TO-220 |
29600 |
绝对原装现货,价格优势! |
询价 | ||
华昕 |
21+ |
TO-220-3 |
5000 |
原装现货/假一赔十/支持第三方检验 |
询价 | ||
华昕 |
99+ |
TO-220-3 |
150 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
华昕 |
99+ |
TO-220-3 |
150 |
全新原装,支持实单,假一罚十,德创芯微 |
询价 |
相关规格书
更多- H04N60F
- H05 BQ-F 3G 0.75
- H05 BQ-F 4G 1
- H05 V-K [0
- H050
- H05010025
- H0503RN-2W
- H0503XS-1W
- H05040002
- H05040013
- H05040017
- H05041
- H0505D-2W
- H0505RN-2W
- H0505S-1W
- H0505XD-2W
- H0505XS-1W
- H0507
- H05091
- H0509CNK
- H0509D-2W
- H0509M1
- H0509S-1W
- H0509XD-2W
- H0509XS-1W
- H050A
- H050BHDA
- H050CAPA
- H050CNK
- H050GRA-C
- H0512D-1W
- H0512LT-2W
- H0512S-1W
- H0512XD-2W
- H0512XS-1W
- H0515LT-2W
- H0515S-1W
- H0515XD-2W
- H0515XS-1W
- H0518XES-2W
- H05-1A69_DE
- H05-1A83_DE
- H05-1B69_DE
- H05-1B83_DE
- H05-1X83
相关库存
更多- H05 BQ-F 2 X 1
- H05 BQ-F 3G 1
- H05 BQ-F 5G 1
- H05/14
- H0501
- H0501M1
- H0503XES-2W
- H0504
- H05040010
- H05040015
- H05040018
- H0505D-1W
- H0505LT-2W
- H0505RN-2W_12
- H0505XD-1W
- H0505XES-2W
- H0505XS-2W
- H0509
- H05091M1
- H0509D-1W
- H0509LT-2W
- H0509RN-2W
- H0509XD-1W
- H0509XES-2W
- H0509XS-2W
- H050BHD
- H050CAP
- H050CAPCP
- H050CP
- H050GRA-TB
- H0512D-2W
- H0512RN-2W
- H0512XD-1W
- H0512XES-2W
- H0512XS-2W
- H0515RN-2W
- H0515XD-1W
- H0515XES-2W
- H0515XS-2W
- H05-1A69
- H05-1A83
- H05-1B69
- H05-1B83
- H05-1X69
- H0520
