| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
LowGateCharge,Surfacemountpackage | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
Capableof2.5VGateDrive,SurfaceMountPackage | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
DualN-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
N-ChannelEnhancementModeMOSFET N-ChannelEnhancementModeMOSFET Features •20V/6A,RDS(ON)=28mΩ(typ.)@VGS=4.5V RDS(ON)=38mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SO-8andTSSOP-8Packages Applications •PowerManageme | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
DualN-ChannelEnhancementModeMOSFET DualN-ChannelEnhancementModeMOSFET Features •20V/6A,RDS(ON)=28mΩ(typ.)@VGS=4.5V RDS(ON)=34mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerMana | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
DualN-ChannelEnhancementModeMOSFET DualN-ChannelEnhancementModeMOSFET Features •20V/6A,RDS(ON)=28mΩ(typ.)@VGS=4.5V RDS(ON)=34mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerMana | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
DualN-ChannelEnhancementModeMOSFET DualN-ChannelEnhancementModeMOSFET Features •20V/6A,RDS(ON)=28mΩ(typ.)@VGS=4.5V RDS(ON)=34mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerMana | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
DualN-ChannelEnhancementModeMOSFET DualN-ChannelEnhancementModeMOSFET Features •20V/6A,RDS(ON)=28mΩ(typ.)@VGS=4.5V RDS(ON)=34mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerMana | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
DualN-ChannelEnhancementModeMOSFET DualN-ChannelEnhancementModeMOSFET Features •20V/6A,RDS(ON)=28mΩ(typ.)@VGS=4.5V RDS(ON)=34mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerMana | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
N-ChannelEnhancementModeMOSFET N-ChannelEnhancementModeMOSFET Features •20V/6A,RDS(ON)=28mΩ(typ.)@VGS=4.5V RDS(ON)=38mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SO-8andTSSOP-8Packages Applications •PowerManageme | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
N-ChannelEnhancementModeMOSFET N-ChannelEnhancementModeMOSFET Features •20V/6A,RDS(ON)=28mΩ(typ.)@VGS=4.5V RDS(ON)=38mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SO-8andTSSOP-8Packages Applications •PowerManageme | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
N-ChannelEnhancementModeMOSFET N-ChannelEnhancementModeMOSFET Features •20V/6A,RDS(ON)=28mΩ(typ.)@VGS=4.5V RDS(ON)=38mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SO-8andTSSOP-8Packages Applications •PowerManageme | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
N-ChannelEnhancementModeMOSFET N-ChannelEnhancementModeMOSFET Features •20V/6A,RDS(ON)=28mΩ(typ.)@VGS=4.5V RDS(ON)=38mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SO-8andTSSOP-8Packages Applications •PowerManageme | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
N-ChannelEnhancementModeMOSFET N-ChannelEnhancementModeMOSFET Features •20V/6A,RDS(ON)=28mΩ(typ.)@VGS=4.5V RDS(ON)=38mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SO-8andTSSOP-8Packages Applications •PowerManageme | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
N-ChannelEnhancementModePowerMOSFET | BellingSHANGHAI BELLING CO., LTD. 上海贝岭上海贝岭股份有限公司 | Belling | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ●20V,26A,RDS(ON)=30mΩ@VGS=4.5V. RDS(ON)=40m@VΩGS=2.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET |
详细参数
- 型号：
GAPM9926C
- 功能描述：
Mini size of Discrete semiconductor elements
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SINYORK |
23+ |
SO-8 |
45000 |
原装正品现货 |
询价 | ||
SINYORK |
24+25+/26+27+ |
SOIC-8 |
57500 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
APPOTECH |
21+ROHS |
QFP |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
GAPR |
23+ |
QFP48 |
6500 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
XX |
2017+ |
QFP |
54785 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
XX |
13+PB |
QFP |
46 |
刚到现货加微13425146986 |
询价 | ||
OSRAM OPTO |
23+ |
NA |
6000 |
原装现货 库存特价/长期供应元器件代理经销 |
询价 | ||
OSRAM/欧司朗 |
23+ |
LED |
6000 |
绝对原厂原装,长期优势可定货 |
询价 | ||
OSRAM |
20000 |
询价 | |||||
OSRAM/欧司朗 |
23+ |
LED |
6000 |
原装欧司朗 订货Q询 |
询价 |
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- GAQW3V330E
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- GAQW3V330
- GAQW3V330EET
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