| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
14A, 600V, UFS Series N-Channel IGBTs TheHGTD7N60C3SandHGTP7N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvar | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
14A, 600V, UFS Series N-Channel IGBTs Description TheHGTD7N60C3,HGTD7N60C3SandHGTP7N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchlowe | HARRIS HARRIS corporation | HARRIS | ||
14A, 600V, UFS Series N-Channel IGBTs TheHGTD7N60C3SandHGTP7N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvar | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes GeneralDescription TheHGTP7N60C3D,HGT1S7N60C3DSandHGT1S7N60C3DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes TheHGTP7N60C3DandHGT1S7N60C3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes GeneralDescription TheHGTP7N60C3D,HGT1S7N60C3DSandHGT1S7N60C3DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
7.4Amps,600VoltsN-CHANNELMOSFET ■DESCRIPTION TheUTC7N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
iscN-ChannelMosfetTransistor •DESCRITION •Designedforhighefficiencyswitchmodepowersupply. •FEATURES •DrainCurrent–ID=7A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) •AvalancheEnergySpecified •FastSwitching •SimpleDriveRequirem | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
7Amps竊?00VoltsN-ChannelMOSFET ■Description TheET7N60N-ChannelenhancementmodesilicongatepowerMOSFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,switchingconverters,solenoid,motordrivers,relaydrivers. ■Features ●RDS(ON)=1.20Ω@VGS=10V ●Lowgatecha | ESTEKEstek Electronics Co. Ltd Estek Electronics Co. Ltd | ESTEK | ||
7.4Amps,600/650VoltsN-CHANNELPOWERMOSFET ■DESCRIPTION TheUTC7N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswi | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
7A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | WXDH | ||
7A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | WXDH | ||
7A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | WXDH | ||
7A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | WXDH | ||
7.4A,600VN-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
N-ChannelPowerMOSFET DESCRIPTION TheNell7N60isathree-terminalsilicondevicewithcurrentconductioncapabilityof7A,fastswitchingspeed,lowon-stateresistance,breakdownvoltageratingof600V,andmax.thresholdvoltageof4volts. Theyaredesignedforuseinapplications.suchasswitchedmodepowersu | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | NELLSEMI | ||
600VN-ChannelPowerMOSFET Features ●RDS(ON) | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | DYELEC | ||
N-CHANNELPOWERMOSFET ■DESCRIPTION 7N607N65isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswitch | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | ZSELEC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HARRIS |
2017+ |
TO252 |
35689 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
HARRIS |
06+07+ |
TO252 |
75 |
询价 | |||
HARRIS |
2018+ |
TO252 |
6528 |
只做原装正品假一赔十!只要网上有上百分百有库存放心 |
询价 | ||
FAIRCHILD |
21+ |
TO-252 |
1484 |
原装现货假一赔十 |
询价 | ||
FAIRCHILD |
21+ |
TO-252 |
56000 |
公司进口原装现货 批量特价支持 |
询价 | ||
FAIRCHILD |
1932+ |
TO-252 |
247 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
HARRIS/哈里斯 |
23+ |
TO252 |
6000 |
专注配单,只做原装进口现货 |
询价 | ||
HARRIS/哈里斯 |
23+ |
TO252 |
6000 |
专注配单,只做原装进口现货 |
询价 | ||
FAIRCHILD |
23+ |
TO-252 |
11000 |
专业优势供应 |
询价 | ||
23+ |
N/A |
90250 |
正品授权货源可靠 |
询价 |
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