G7N60C3D中文资料PDF规格书
G7N60C3D规格书详情
General Description
The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is developmental type TA49115. The diode used in anti-parallel with the IGBT is developmental type TA49057.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Features
• 14A, 600V at TC = 25°C
• 600V Switching SOA Capability
• Typical Fall Time...................140ns at TJ = 150°C
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
GOFORD(谷峰) |
23+ |
SOT233L |
6000 |
询价 | |||
进口原装 |
23+ |
3167 |
1015 |
全新原装现货 |
询价 | ||
FAI |
1816+ |
. |
6523 |
科恒伟业!只做原装正品,假一赔十! |
询价 | ||
FAIRCHI |
2023+ |
TO-263 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
IR |
09+ |
TO-247 |
62 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
BEI |
23+ |
NA/ |
50 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
BEL-贝尔 |
24+25+/26+27+ |
网络-变压器 |
12680 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
OmronElectronicsInc-EMCD |
2022 |
RELAYPWRDPDT24VDC |
3268 |
原厂原装正品,价格超越代理 |
询价 | ||
BEI |
SMD |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
IR |
2023+ |
TO-3P |
3685 |
全新原厂原装产品、公司现货销售 |
询价 |